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SIDC26D60C6 PDF预览

SIDC26D60C6

更新时间: 2024-09-16 03:32:03
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管开关软恢复二极管快速软恢复二极管
页数 文件大小 规格书
4页 60K
描述
Fast switching diode chip in EMCON 3 -Technology

SIDC26D60C6 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIE包装说明:6.53 X 4.02 MM, DIE-1
针数:1Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.40
风险等级:5.72Is Samacsys:N
应用:FAST SOFT RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.9 VJESD-30 代码:R-XUUC-N1
JESD-609代码:e0元件数量:1
相数:1端子数量:1
最高工作温度:175 °C最大输出电流:100 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
子类别:Rectifier Diodes表面贴装:YES
端子面层:TIN LEAD端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SIDC26D60C6 数据手册

 浏览型号SIDC26D60C6的Datasheet PDF文件第2页浏览型号SIDC26D60C6的Datasheet PDF文件第3页浏览型号SIDC26D60C6的Datasheet PDF文件第4页 
SIDC26D60C6  
Fast switching diode chip in EMCON 3 -Technology  
A
C
FEATURES:  
This chip is used for:  
·
·
·
·
600V EMCON 3 technology 70 µm chip  
soft, fast switching  
low reverse recovery charge  
small temperature coefficient  
·
power module  
Applications:  
·
drives  
Chip Type  
VR  
IF  
Die Size  
Package  
6.53 x 4.02 mm2  
sawn on foil  
SIDC26D60C6  
600V 100A  
MECHANICAL PARAMETER:  
Raster size  
6.53 x 4.02  
mm2  
Area total / active  
Anode pad size  
Thickness  
26.25 / 22.23  
5.83 x 3.32  
70  
µm  
mm  
deg  
Wafer size  
150  
180  
Flat position  
Max. possible chips per wafer  
Passivation frontside  
Anode metallization  
554 pcs  
Photoimide  
3200 nm AlSiCu  
Ni Ag –system  
Cathode metallization  
Die bond  
suitable for epoxy and soft solder die bonding  
electrically conductive glue or solder  
Wire bond  
Al, £500µm  
Reject ink dot size  
Æ 0.65mm; max 1.2mm  
store in original container, in dry nitrogen,  
< 6 month at an ambient temperature of 23°C  
Recommended storage environment  
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4581M, Edition 1.1, 10.07.2006  

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