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SIDC42D120H6X1SA3 PDF预览

SIDC42D120H6X1SA3

更新时间: 2024-11-05 15:51:15
品牌 Logo 应用领域
英飞凌 - INFINEON 软恢复二极管快速软恢复二极管
页数 文件大小 规格书
4页 279K
描述
Rectifier Diode, 1 Phase, 1 Element, 75A, 1200V V(RRM), Silicon, 6.50 X 6.50 MM, DIE-1

SIDC42D120H6X1SA3 技术参数

生命周期:Active零件包装代码:DIE
包装说明:6.50 X 6.50 MM, DIE-1针数:1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.40风险等级:5.66
应用:FAST SOFT RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:S-XUUC-N1JESD-609代码:e3
元件数量:1相数:1
端子数量:1最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:75 A
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:UNCASED CHIP认证状态:Not Qualified
最大重复峰值反向电压:1200 V表面贴装:YES
端子面层:MATTE TIN端子形式:NO LEAD
端子位置:UPPERBase Number Matches:1

SIDC42D120H6X1SA3 数据手册

 浏览型号SIDC42D120H6X1SA3的Datasheet PDF文件第2页浏览型号SIDC42D120H6X1SA3的Datasheet PDF文件第3页浏览型号SIDC42D120H6X1SA3的Datasheet PDF文件第4页 
Preliminary  
SIDC42D120H6  
Fast switching diode chip in EMCON-Technology  
A
FEATURES:  
This chip is used for:  
EUPEC power modules and  
discrete devices  
·
·
·
·
1200V EMCON technology 120 µm chip  
soft, fast switching  
low reverse recovery charge  
small temperature coefficient  
·
C
Applications:  
SMPS, resonant applications,  
drives  
·
Chip Type  
VR  
IF  
Die Size  
6.5 x 6.5 mm2  
Package  
Ordering Code  
Q67050-A4099-  
A102  
SIDC42D120H6  
1200V 75A  
sawn on foil  
MECHANICAL PARAMETER:  
Raster size  
6.5 x 6.5  
42.25 / 33.99  
5.78 x 5.78  
120  
mm2  
Area total / active  
Anode pad size  
Thickness  
µm  
mm  
deg  
Wafer size  
150  
Flat position  
180  
Max. possible chips per wafer  
Passivation frontside  
Anode metallisation  
334 pcs  
Photoimide  
3200 nm AlSiCu  
1400 nm Ni Ag –system  
suitable for epoxy and soft solder die bonding  
Cathode metallisation  
Die bond  
electrically conductive glue or solder  
Wire bond  
Al, £500µm  
Reject Ink Dot Size  
Æ 0.65mm ; max 1.2mm  
store in original container, in dry nitrogen,  
< 6 month at an ambient temperature of 23°C  
Recommended Storage Environment  
Edited by INFINEON Technologies AI PS DD HV3, L 4192S, Edition 1, 8.01.2002  

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