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SIDC30D60E6 PDF预览

SIDC30D60E6

更新时间: 2024-11-21 03:32:03
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管开关软恢复二极管快速软恢复二极管
页数 文件大小 规格书
4页 210K
描述
Fast switching diode chip in EMCON-Technology

SIDC30D60E6 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:DIE
包装说明:S-XUUC-N1针数:1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.40风险等级:5.75
Is Samacsys:N应用:FAST SOFT RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:S-XUUC-N1
元件数量:1相数:1
端子数量:1最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:75 A
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
子类别:Rectifier Diodes表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SIDC30D60E6 数据手册

 浏览型号SIDC30D60E6的Datasheet PDF文件第2页浏览型号SIDC30D60E6的Datasheet PDF文件第3页浏览型号SIDC30D60E6的Datasheet PDF文件第4页 
Preliminary  
SIDC30D60E6  
Fast switching diode chip in EMCON-Technology  
A
FEATURES:  
This chip is used for:  
EUPEC power modules and  
discrete devices  
·
·
·
·
600V EMCON technology 70 µm chip  
soft , fast switching  
low reverse recovery charge  
small temperature coefficient  
·
C
Applications:  
SMPS, resonant applications,  
drives  
·
Chip Type  
VR  
IF  
75A  
Die Size  
5.5 x 5.5 mm2  
Package  
Ordering Code  
C67047-A4679-  
A001  
SIDC30D60E6  
600V  
sawn on foil  
MECHANICAL PARAMETER:  
Raster size  
5.5 x 5.5  
30.25 / 23.33  
4.78 x 4.78  
70  
mm2  
Area total / active  
Anode pad size  
Thickness  
µm  
mm  
deg  
Wafer size  
150  
Flat position  
180  
Max. possible chips per wafer  
Passivation frontside  
Anode metallisation  
482 pcs  
Photoimide  
3200 nm AlSiCu  
1400 nm Ni Ag –system  
suitable for epoxy and soft solder die bonding  
Cathode metallisation  
Die bond  
electrically conductive glue or solder  
Wire bond  
Al, £500µm  
Reject Ink Dot Size  
Æ 0.65mm ; max 1.2mm  
store in original container, in dry nitrogen,  
< 6 month at an ambient temperature of 23°C  
Recommended Storage Environment  
Edited by INFINEON Technologies AI PS DD HV3, L 4183M, Edition 1, 8.01.2002  

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