Datasheet > SIDC38D65C8X1SA1

SIDC38D65C8X1SA1

更新时间： 2024-11-05 21:11:35

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管
页数	文件大小	规格书
4页	103K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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SIDC38D65C8X1SA1 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	13 weeks	风险等级：	5.72
二极管类型：	RECTIFIER DIODE	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

SIDC38D65C8X1SA1 数据手册

SIDC38D65C8

Fast switching diode chip in EMCON 3 -Technology

Recommended for:

Features:

•

Power module

•

650V EMCON 3 technology 65 µm chip

Soft, fast switching

Low reverse recovery charge

Small temperature coefficient

Qualified according to JEDEC for target

applications

Applications:

•

Drives

White goods

Resonant applications

1 )

Chip Type

SIDC38D65C8

V_R

I_Fn

Die Size

Package

sawn on foil

650V 150A

4.9 x 7.8 mm²

^{1 )}nominal forward current at Tc = 100°C, not subject to production test - verified by design/characterisation

Mechanical Parameters

Die size

4.9 x 7.8

38.22

4.2 x 7.1

mm²

Area total

Anode pad size

Thickness

µm

Wafer size

200

Max. possible chips per wafer

Passivation frontside

Pad metal

694

Photoimide

3200 nm AlSiCu

Ni Ag –system

Backside metal

Die bond

Electrically conductive epoxy glue and soft solder

Wire bond

Al, ≤500µm

Reject ink dot size

0.65mm; max 1.2mm

for original and

Ambient atmosphere air, Temperature 17°C – 25°C,

< 6 month

sealed MBB bags

Storage environment

Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,

Humidity <25%RH, Temperature 17°C – 25°C, < 6 month

for open MBB bags

Edited by INFINEON Technologies, IFAG IMM PSD D, L4030C, Edition 1.0, 12.09.2011

12 3 4

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