Datasheet > SIDC42D170E6_08

SIDC42D170E6_08

更新时间： 2024-11-06 09:25:35

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管开关
页数	文件大小	规格书
4页	60K
描述
Fast switching diode chip in Emitter Controlled -Technology

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SIDC42D170E6_08 数据手册

SIDC42D170E6

Fast switching diode chip in Emitter Controlled -Technology

This chip is used for:

Features:

power modules and discrete

devices

1700V technology, Emitter Controlled

soft, fast switching

low reverse recovery charge

small temperature coefficient

Applications:

SMPS, resonant applications,

drives

Chip Type

V_R

I_F

Die Size

Package

6.5 x 6.5 mm²

sawn on foil

SIDC42D170E6

1700V 50A

MechanicalParameter

Raster size

6.5 x 6.5

mm²

Area total

42.25

4.48 x 4.48

200

Anode pad size

Thickness

µm

Wafer size

150

Max. possible chips per wafer

Passivation frontside

Pad metal

339

Photoimide

3200 nm AlSiCu

Ni Ag –system

Backside metal

Die bond

suitable for epoxy and soft solder die bonding

Electrically conductive glue or solder

Wire bond

Al, £500µm

Reject ink dot size

Æ 0.65mm; max 1.2mm

Store in original container, in dry nitrogen,in dark

environment, < 6 month at an ambient temperature of 23°C

Recommended storage environment

Edited by INFINEON Technologies, AIM PMD D CID CLS, L4241N, Edition 1.2, 28.07.2008

12 3 4

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