SIDC38D60C6

更新时间： 2024-09-16 03:32:03

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管开关
页数	文件大小	规格书
4页	61K
描述
Fast switching diode chip in EMCON 3 -Technology

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SIDC38D60C6 数据手册

SIDC38D60C6

Fast switching diode chip in EMCON 3 -Technology

FEATURES:

This chip is used for:

600V EMCON 3 technology 70 µm chip

soft, fast switching

low reverse recovery charge

small temperature coefficient

power module

Applications:

drives

Chip Type

V_R

I_F

Die Size

Package

7.8 x 4.9 mm²

sawn on foil

SIDC38D60C6

600V 150A

MECHANICAL PARAMETER:

Raster size

7.8 x 4.9

mm²

Area total / active

Anode pad size

Thickness

38.22 / 33.38

7.1 x 4.2

µm

deg

Wafer size

150

Flat position

180

Max. possible chips per wafer

Passivation frontside

Anode metallization

353 pcs

Photoimide

3200 nm AlSiCu

Ni Ag –system

Cathode metallization

Die bond

suitable for epoxy and soft solder die bonding

electrically conductive glue or solder

Wire bond

Al, £500µm

Reject ink dot size

Æ 0.65mm; max 1.2mm

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

Recommended storage environment

Edited by INFINEON Technologies, AIM PMD D CID CLS, L4591M, Edition 1.1, 10.07.2006

12 3 4

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