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SIDC26D60C8 PDF预览

SIDC26D60C8

更新时间: 2024-11-21 20:11:03
品牌 Logo 应用领域
英飞凌 - INFINEON 软恢复二极管快速软恢复二极管
页数 文件大小 规格书
4页 45K
描述
Rectifier Diode, 1 Phase, 1 Element, 100A, 600V V(RRM), Silicon, DIE-1

SIDC26D60C8 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:DIE-1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.40风险等级:5.71
应用:FAST SOFT RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.9 VJESD-30 代码:R-XUUC-N1
元件数量:1相数:1
端子数量:1最高工作温度:175 °C
最低工作温度:-40 °C最大输出电流:100 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:600 V最大反向电流:27 µA
表面贴装:YES端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SIDC26D60C8 数据手册

 浏览型号SIDC26D60C8的Datasheet PDF文件第2页浏览型号SIDC26D60C8的Datasheet PDF文件第3页浏览型号SIDC26D60C8的Datasheet PDF文件第4页 
SIDC26D60C8  
Fast switching diode chip in Emitter Controlled 3 -Technology  
A
C
This chip is used for:  
Features:  
Power module  
600V Emitter Controlled 3 technology  
70 µm chip  
soft, fast switching  
low reverse recovery charge  
small temperature coefficient  
Applications:  
Drives  
Chip Type  
VR  
IF  
Die Size  
Package  
6.53 x 4.02 mm2  
sawn on foil  
SIDC26D60C8  
600V 100A  
Mechanical Parameters  
Raster size  
6.53 x 4.02  
mm2  
Area total  
26.25  
5.83 x 3.32  
70  
Anode pad size  
Thickness  
µm  
Wafer size  
200  
mm  
Max. possible chips per wafer  
Passivation frontside  
Pad metal  
1032  
Photoimide  
3200 nm AlSiCu  
Ni Ag –system  
Backside metal  
Die bond  
suitable for epoxy and soft solder die bonding  
Electrically conductive glue or solder  
Wire bond  
Al, 500µm  
Reject ink dot size  
0.65mm; max 1.2mm  
Store in original container, in dry nitrogen, in dark  
environment, < 6 month at an ambient temperature of 23°C  
Recommended storage environment  
Edited by INFINEON Technologies, IMM PSD, L4028M, Edition 1.2, 08.07.10  

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