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SIDC24D60SIC3 PDF预览

SIDC24D60SIC3

更新时间: 2024-09-15 22:21:51
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管肖特基二极管
页数 文件大小 规格书
4页 57K
描述
Silicon Carbide Schottky Diode

SIDC24D60SIC3 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIE包装说明:R-XUUC-N1
针数:1Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.40
风险等级:5.84Is Samacsys:N
其他特性:SNUBBER DIODE应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON CARBIDE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.7 V
JESD-30 代码:R-XUUC-N1JESD-609代码:e0
最大非重复峰值正向电流:26 A元件数量:1
相数:1端子数量:1
最高工作温度:175 °C最大输出电流:8 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:TIN LEAD
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SIDC24D60SIC3 数据手册

 浏览型号SIDC24D60SIC3的Datasheet PDF文件第2页浏览型号SIDC24D60SIC3的Datasheet PDF文件第3页浏览型号SIDC24D60SIC3的Datasheet PDF文件第4页 
SIDC24D60SIC3  
Silicon Carbide Schottky Diode  
A
FEATURES:  
Applications:  
SMPS, PFC, snubber  
·
Revolutionary semiconductor material -  
Silicon Carbide  
·
C
·
·
·
Switching behavior benchmark  
No reverse recovery  
No temperature influence on the switching  
behavior  
·
No forward recovery  
Chip Type  
VBR  
IF  
Die Size  
Package  
Ordering Code  
Q67050-A4281-  
A101  
1.706 x 1.38 mm2 sawn on foil  
SIDC24D60SIC3  
600V  
8A  
MECHANICAL PARAMETER:  
Raster size  
1.706x 1.38  
1.405 x 1.08  
2.354 / 1.548  
355  
mm  
Anode pad size  
Area total / active  
Thickness  
mm2  
µm  
Wafer size  
75  
mm  
deg  
Flat position  
0
Max. possible chips per wafer  
Passivation frontside  
Anode metalization  
1649 pcs  
Photoimide  
3200 nm Al  
1400 nm Ni Ag –system  
suitable for epoxy and soft solder die bonding  
Cathode metalization  
Die bond  
Electrically conductive glue or solder  
Wire bond  
Al, £ 350µm  
Æ ³ 0.3 mm  
Reject Ink Dot Size  
store in original container, in dry nitrogen,  
< 6 month at an ambient temperature of 23°C  
Recommended Storage Environment  
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004  

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