Datasheet > SIB408DK

SIB408DK

更新时间： 2024-11-15 09:25:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	228K
描述
N-Channel 30-V (D-S) MOSFET

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SIB408DK 数据手册

New Product

SiB408DK

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

Definition

7^a

0.040 at V_GS= 10 V

0.050 at V_GS= 4.5 V

•

TrenchFET^®Power MOSFET

New Thermally Enhanced PowerPAK^®

SC-75 Package

2.9 nC

- Small Footprint Area

- Low On-Resistance

100 % R_gTested

•

PowerPAK SC-75-6L-Single

100 % UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Notebook

Marking Code

- Load Switch

A E X

Part # code

X X X

Lot Traceability

and Date code

1.60 mm

Ordering Information: SiB408DK-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

Unit

7^a

_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

6^{b, c}

T_A= 25 °C

T_A= 70 °C

4.8^{b, c}

7^a

2^{b, c}

Pulsed Drain Current

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

Avalanche Current Pulse

Avalanche Energy

I_AS

E_AS

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

8.4

P_D

Maximum Power Dissipation

2.4^{b, c}

1.6^{b, c}

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

R_thJC

Typical

Maximum

Unit

t ≤ 5 s

°C/W

Steady State

7.5

9.5

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 105 °C/W.

Document Number: 64828

S09-0859-Rev. A, 18-May-09

www.vishay.com

12 3 4 5 6 7...9

中文翻译

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与SIB408DK相关器件

型号	品牌	获取价格	描述	数据表
SIB408DK-T1-GE3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SIB410DK	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIB410DK-T1-GE3	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIB411DK-T1-E3	VISHAY	获取价格	Transistor
SIB411DK-T1-GE3	VISHAY	获取价格	P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel
SIB412DK-T1-E3	VISHAY	获取价格	MOSFET N-CH 20V 9A SC75-6
SIB412DK-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SIB413DK-T1-E3	VISHAY	获取价格	Transistor
SIB413DK-T1-GE3	VISHAY	获取价格	Transistor
SIB414DK-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 8V 7.9A 6-Pin PowerPAK SC-75 T/R

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