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SIB419DK-T1-GE3 PDF预览

SIB419DK-T1-GE3

更新时间: 2024-09-28 14:44:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 111K
描述
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET

SIB419DK-T1-GE3 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N配置:Single
最大漏极电流 (Abs) (ID):9 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):13.1 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

SIB419DK-T1-GE3 数据手册

 浏览型号SIB419DK-T1-GE3的Datasheet PDF文件第2页浏览型号SIB419DK-T1-GE3的Datasheet PDF文件第3页浏览型号SIB419DK-T1-GE3的Datasheet PDF文件第4页浏览型号SIB419DK-T1-GE3的Datasheet PDF文件第5页浏览型号SIB419DK-T1-GE3的Datasheet PDF文件第6页浏览型号SIB419DK-T1-GE3的Datasheet PDF文件第7页 
New Product  
SiB419DK  
Vishay Siliconix  
P-Channel 12-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)f, g  
- 9  
TrenchFET® Power MOSFET  
0.060 at VGS = - 4.5 V  
0.082 at VGS = - 2.5 V  
0.114 at VGS = - 1.8 V  
New Thermally Enhanced PowerPAK®  
SC-75 Package  
RoHS  
- 12  
- 9  
7.15 nC  
COMPLIANT  
- Small Footprint Area  
- 2  
APPLICATIONS  
Load Switch, PA Switch and Battery Switch for Portable  
PowerPAK SC-75-6L-Single  
Devices  
S
1
D
Marking Code  
2
D
G
B F X  
X X X  
3
Part # code  
G
D
6
Lot Traceability  
and Date code  
S
D
5
1.60 mm  
S
1.60 mm  
D
4
P-Channel MOSFET  
Ordering Information: SiB419DK-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
- 12  
8
Unit  
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
T
C = 25 °C  
C = 70 °C  
- 9  
T
- 9  
Continuous Drain Current (TJ = 150 °C)  
ID  
- 5.2a, b  
- 4.2a, b  
- 15  
TA = 25 °C  
TA = 70 °C  
A
Pulsed Drain Current  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
- 10.9  
- 2.0a, b  
13.1  
Continuous Source-Drain Diode Current  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
8.4  
PD  
Maximum Power Dissipation  
W
2.45a, b  
1.6a, b  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)c, d  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambienta, e  
Maximum Junction-to-Case (Drain)  
Symbol  
RthJA  
Typical  
41  
Maximum  
Unit  
t 5 s  
Steady State  
51  
°C/W  
RthJC  
7.5  
9.5  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
b. t = 5 s.  
c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
e. Maximum under Steady State conditions is 105 °C/W.  
f. Based on TC = 25 °C.  
g. Package Limited.  
Document Number: 70440  
S-82286-Rev. D, 22-Sep-08  
www.vishay.com  
1

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