Datasheet > SiB4316EDK

SiB4316EDK

更新时间： 2024-09-29 14:54:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	181K
描述
N-Channel 30 V (D-S) MOSFET

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SiB4316EDK 数据手册

SiB4316EDK

Vishay Siliconix

www.vishay.com

N-Channel 30 V (D-S) MOSFET

FEATURES

PowerPAK^®SC-75-6L Single

• TrenchFET^®power MOSFET

• Thermally enhanced PowerPAK^®SC-70 package

- Small footprint area

- Low on-resistance

• Typical ESD protection: 1500 V (HBM)

• 100 % R_gtested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Portable devices such as smart

phones, tablet PCs and mobile

computing

- Load switch

Top View

Bottom View

Marking Code: AK

PRODUCT SUMMARY

V_DS(V)

0.057

0.062

0.078

3.5

- DC/DC converter

- Power management

_DS(on)max. (Ω) at V_GS= 10 V

R_DS(on)max. (Ω) at V_GS= 4.5 V

_DS(on)max. (Ω) at V_GS= 2.5 V

N-Channel MOSFET

Q_gtyp. (nC)

I_D(A) ^{a, c}

Configuration

Single

ORDERING INFORMATION

Package

PowerPAK SC-75

Lead (Pb)-free and halogen-free

SiB4316EDK-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

6 ^a

4.5 ^{b, c}

3.6 ^{b, c}

6 ^a

1.63 ^{b, c}

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 300 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

Continuous source-drain diode current

_C= 25 °C

_C= 70 °C

6.4

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

1.9^{5 b, c}

1.25 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d,e

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{b, f}

SYMBOL

R_thJA

TYPICAL

MAXIMUM

UNIT

t ≤ 5 s

Steady state

°C/W

Maximum junction-to-case (drain)

R_thJC

12.5

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 5 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state condition is 100 °C/W

S21-1168-Rev. A, 29-Nov-2021

Document Number: 63165

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与SiB4316EDK相关器件

型号	品牌	获取价格	描述	数据表
SiB4317EDK	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
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