Datasheet > SiB433EDK

SiB433EDK

更新时间： 2024-09-29 01:16:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	215K
描述
P-Channel 20-V (D-S) MOSFET

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SiB433EDK 数据手册

SiB433EDK

Vishay Siliconix

P-Channel 20-V (D-S) MOSFET

FEATURES

TrenchFET^®Power MOSFET

PRODUCT SUMMARY

•

New Thermally Enhanced PowerPAK^®

V_DS(V)

R_DS(on)()

I_D(A)

Q_g(Typ.)

SC-75 Package

- Small Footprint Area

- Low On-Resistance

- 9^a

0.058 at V_GS= - 4.5 V

0.077 at V_GS= - 2.5 V

0.105 at V_GS= - 1.8 V

- 20

7.6 nC

•

100 % R Tested

- 5

Typical ESD Performance 2000 V

Built in ESD Protection with Zener Diode

Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PowerPAK SC-75-6L-Single

APPLICATIONS

•

Load Switch for Portable Devices

Charger Switch for Portable

Devices

Marking Code

1.60 mm

B L X

Part # code

X X X

Lot Traceability

and Date code

Ordering Information:

SiB433EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

- 20

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

- 9^a

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

- 9^a

Continuous Drain Current (T_J= 150 °C)

I_D

- 5.3^{b, c}

- 4.3^{b, c}

- 20

- 9^a

- 2^{b, c}

Pulsed Drain Current

I_DM

I_S

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

T_C= 25 °C

_C= 70 °C

8.4

Maximum Power Dissipation

P_D

2.4^{b, c}

1.6^{b, c}

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t  5 s

Steady State

°C/W

R_thJC

7.5

9.5

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 105 °C/W.

Document Number: 65652

S12-0979-Rev. B, 30-Apr-12

For technical support, please contact: pmostechsupport@vishay.com

This document is subject to change without notice.

www.vishay.com

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiB433EDK相关器件

型号	品牌	获取价格	描述	数据表
SIB433EDK_17	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SIB433EDK-T1-GE3	VISHAY	获取价格	VISSIB433EDK-T1-GE3 P-CHANNEL 20-V (D-S)
SIB437EDKT	VISHAY	获取价格	P-Channel 8 V (D-S) MOSFET
SIB437EDKT-T1-GE3	VISHAY	获取价格	SiB437EDKT P-Channel 8 V (D-S) MOSFET
SiB441EDK	VISHAY	获取价格	P-Channel 12 V (D-S) MOSFET
SiB452DK	VISHAY	获取价格	N-Channel 190 V (D-S) MOSFET
SIB452DK-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R
SIB455EDK	VISHAY	获取价格	P-Channel 12-V (D-S) MOSFET
SIB455EDK-T1-GE3	VISHAY	获取价格	P-Channel 12-V (D-S) MOSFET
SIB456DK	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET

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