Datasheet > SIB800EDK

SIB800EDK

更新时间： 2024-09-28 09:25:39

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
11页	244K
描述
N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIB800EDK 数据手册

New Product

SiB800EDK

Vishay Siliconix

N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

LITTLE FOOT^®Plus Schottky Power MOSFET

New Thermally Enhanced PowerPAK^®

SC-75 Package

I_D(A)^a

1.5

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

0.225 at V_GS= 4.5 V

0.270 at V_GS= 2.5 V

0.345 at V_GS= 1.8 V

0.960 at V_GS= 1.5 V

1.5

1.1 nC

1.5

- Small Footprint Area

- Low On-Resistance

0.5

- Thin 0.75 mm profile

Typical ESD Protection 2800 V

SCHOTTKY PRODUCT SUMMARY

•

V_f(V)

V_KA(V)

I_F(A)^a

Diode Forward Voltage

APPLICATIONS

0.29 at 10 mA

0.4

•

Portable Devices

•

DC/DC Converters

PowerPAK SC75-6L-Dual

200 Ω

Marking Code

G A X

X X X

Part # code

Lot Traceability

and Date code

1.60 mm

Ordering Information: SiB800EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage (MOSFET)

Reverse Voltage (Schottky)

Gate-Source Voltage (MOSFET)

V_KA

V_GS

T_C= 25 °C

_C= 70 °C

1.5^a

1.5^{a, b, c}

1.3^{b, c}

Continuous Drain Current (T_J= 150 °C) (MOSFET)

I_D

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (MOSFET)

T_C= 25 °C

1.5^a

Continuous Source-Drain Diode Current

(MOSFET Diode Conduction)

0.9^{b, c}

0.4^b

0.8

T_A= 25 °C

I_F

Average Forward Current (Schottky)

Pulsed Forward Current (Schottky)

I_FM

_C= 25 °C

_C= 70 °C

_A= 25 °C

3.1

Maximum Power Dissipation (MOSFET)

Maximum Power Dissipation (Schottky)

1.1^{b, c}

0.7^{b, c}

3.1

T_A= 70 °C

T_C= 25 °C

T_C= 70 °C

P_D

1.1^{b, c}

0.7^{b, c}

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

Document Number: 68860

S-83045-Rev. B, 22-Dec-08

www.vishay.com

12 3 4 5 6 7...11

中文翻译

下载PDF

与SIB800EDK相关器件

型号	品牌	获取价格	描述	数据表
SIB800EDK-T1-GE3	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode
SIB865170	CELDUC	获取价格	AC Semiconductor Contactor
SIB865970	CELDUC	获取价格	AC Semiconductor Contactor
SI-B8R08128CWW	SAMSUNG	获取价格	LED MODULE LT-V282B 5000K STRIP
SI-B8R11156CWW	SAMSUNG	获取价格	LED MODULE LT-V562A 5000K STRIP
SI-B8R15156CWW	SAMSUNG	获取价格	LED MODULE LT-V562B 5000K STRIP
SI-B8R152560WW	SAMSUNG	获取价格	LED MOD LTM562BG2 COOL WHT STRIP
SI-B8R221B2CUS	SAMSUNG	获取价格	LED MODULE LT-VB22A 5000K STRIP
SI-B8R341B2CUS	SAMSUNG	获取价格	LED MOD V SERIES 5000K STRIP
SI-B8T08128CWW	SAMSUNG	获取价格	LED MODULE LT-V282B 4000K STRIP