SIB455EDK-T1-GE3

更新时间： 2024-09-28 09:25:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	140K
描述
P-Channel 12-V (D-S) MOSFET

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SIB455EDK-T1-GE3 数据手册

New Product

SiB455EDK

Vishay Siliconix

P-Channel 12-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

Definition

- 9^a

- 3

0.027 at V_GS= - 4.5 V

0.039 at V_GS= - 2.5 V

0.069 at V_GS= - 1.8 V

0.130 at V_GS= - 1.5 V

•

TrenchFET^®Power MOSFET

New Thermally Enhanced PowerPAK^®

SC-75 Package

- 12

11.3 nC

- Small Footprint Area

- Low On-Resistance

•

Typical ESD Performance 1500 V

100 % R Tested

Compliant to RoHS Directive 2002/95/EC

PowerPAK SC-75-6L-Single

APPLICATIONS

•

Load Switch, PA Switch and Battery

Switch for Portable Devices

Marking Code

B K X

X X X

Part # code

Lot Traceability

and Date code

1.60 mm

Ordering Information: SiB455EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 12

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

- 9^a

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

- 9^a

Continuous Drain Current (T_J= 150 °C)

I_D

- 7.8^{b, c}

- 6.2^{b, c}

- 25

- 9^a

- 2^{b, c}

Pulsed Drain Current

I_DM

I_S

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

T_C= 25 °C

_C= 70 °C

8.4

Maximum Power Dissipation

P_D

2.4^{b, c}

1.6^{b, c}

T_A= 25 °C

T_A= 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

T_J, T_stg

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

R_thJA

t ≤ 5 s

Steady State

°C/W

R_thJC

7.5

9.5

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 105 °C/W.

Document Number: 65599

S09-2682-Rev. A, 14-Dec-09

www.vishay.com

12 3 4 5 6 7

中文翻译

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SIB455EDK-T1-GE3 替代型号

型号	品牌	替代类型	描述	数据表
SIB411DK-T1-GE3	VISHAY	类似代替	P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel
SIB411DK-T1-E3	VISHAY	功能相似	Transistor

与SIB455EDK-T1-GE3相关器件

型号	品牌	获取价格	描述	数据表
SIB456DK	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET
SIB457EDK	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SIB457EDK-T1-GE3	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SIB488DK	VISHAY	获取价格	N-Channel 12 V (D-S) MOSFET
SIB488DK-T1-GE3	VISHAY	获取价格	N-Channel 12 V (D-S) MOSFET
SIB765170	CELDUC	获取价格	AC Semiconductor Contactor
SIB800EDK	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode
SIB800EDK-T1-GE3	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode
SIB865170	CELDUC	获取价格	AC Semiconductor Contactor
SIB865970	CELDUC	获取价格	AC Semiconductor Contactor

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