Datasheet > SIB422EDK

SIB422EDK

更新时间： 2024-09-28 09:25:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	229K
描述
N-Channel 20-V (D-S) MOSFET

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SIB422EDK 数据手册

New Product

SiB422EDK

Vishay Siliconix

N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

I_D(A)^a

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

Definition

0.030 at V_GS= 4.5 V

0.041 at V_GS= 2.5 V

0.057 at V_GS= 1.8 V

0.082 at V_GS= 1.5 V

•

TrenchFET^®Power MOSFET

New Thermally Enhanced PowerPAK^®

SC-75 Package

6 nC

- Small Footprint Area

- Low On-Resistance

- Thin 0.75 mm Profile

Typical ESD Protection 4000 V

100 % R_gTested

PowerPAK SC-75-6L-Single

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Portable Devices

- Load Switch

- Battery Switch

Marking Code

A F X

X X X

Part # code

Lot Traceability

and Date code

1.60 mm

Ordering Information: SiB422EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

_C= 70 °C

9^a

7.1^{b, c}

5.7^{b, c}

9^a

2.1^{b, c}

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

8.4

P_D

Maximum Power Dissipation

2.5^{b, c}

1.6^{b, c}

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 5 s

Steady State

°C/W

R_thJC

7.5

9.5

Notes:

a. Package limited, T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 105 °C/W.

Document Number: 65297

S09-1919-Rev. A, 28-Sep-09

www.vishay.com

12 3 4 5 6 7...9

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与SIB422EDK相关器件

型号	品牌	获取价格	描述	数据表
SIB422EDK-T1-GE3	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET
SiB4316EDK	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiB4317EDK	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SiB433EDK	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SIB433EDK_17	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SIB433EDK-T1-GE3	VISHAY	获取价格	VISSIB433EDK-T1-GE3 P-CHANNEL 20-V (D-S)
SIB437EDKT	VISHAY	获取价格	P-Channel 8 V (D-S) MOSFET
SIB437EDKT-T1-GE3	VISHAY	获取价格	SiB437EDKT P-Channel 8 V (D-S) MOSFET
SiB441EDK	VISHAY	获取价格	P-Channel 12 V (D-S) MOSFET
SiB452DK	VISHAY	获取价格	N-Channel 190 V (D-S) MOSFET

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