Datasheet > SIB412DK-T1-E3

SIB412DK-T1-E3

更新时间： 2024-11-23 22:57:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	135K
描述
MOSFET N-CH 20V 9A SC75-6

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SIB412DK-T1-E3 数据手册

New Product

SiB412DK

Vishay Siliconix

N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

TrenchFET^®Power MOSFET

9^a

0.034 at V_GS= 4.5 V

0.040 at V_GS= 2.5 V

0.054 at V_GS= 1.8 V

New Thermally Enhanced PowerPAK^®

SC-75 Package

RoHS

6.14 nC

COMPLIANT

- Small Footprint Area

- Low On-Resistance

APPLICATIONS

•

Load Switch, PA Switch and Battery Switch for Portable

Devices

PowerPAK SC-75-6L-Single

•

DC/DC Converter

Marking Code

A A X

X X X

Part # code

Lot Traceability

and Date code

1.60 mm

N-Channel MOSFET

Ordering Information: SiB412DK-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

9^a

_C= 25 °C

_C= 70 °C

9^a

Continuous Drain Current (T_J= 150 °C)

I_D

6.6^{b, c}

5.29^{b, c}

9^a

2^{b, c}

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

8.4

P_D

Maximum Power Dissipation

2.4^{b, c}

1.6^{b, c}

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 5 s

Steady State

°C/W

R_thJC

7.5

9.5

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 Board.

c. t = 5 s.

d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 105 °C/W.

Document Number: 70439

S-80515-Rev. C, 10-Mar-08

www.vishay.com

12 3 4 5 6 7

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与SIB412DK-T1-E3相关器件

型号	品牌	获取价格	描述	数据表
SIB412DK-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SIB413DK-T1-E3	VISHAY	获取价格	Transistor
SIB413DK-T1-GE3	VISHAY	获取价格	Transistor
SIB414DK-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 8V 7.9A 6-Pin PowerPAK SC-75 T/R
SIB415DK	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET
SIB415DK-T1-E3	VISHAY	获取价格	Transistor
SIB415DK-T1-GE3	VISHAY	获取价格	MOSFET P-CH 30V 9A SC75-6
SIB417AEDK-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 9A I(D), 8V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal
SIB417DK-T1-E3	VISHAY	获取价格	Transistor
SIB417DK-T1-GE3	VISHAY	获取价格	TRANSISTOR 5.6 A, 8 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMP

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