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SIB417AEDK-T1-GE3

更新时间： 2024-11-15 21:09:15
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲光电二极管晶体管
页数 文件大小 规格书
9页 227K
描述
Power Field-Effect Transistor, 9A I(D), 8V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-75, POWERPAK-6

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SIB417AEDK-T1-GE3 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-75, POWERPAK-6Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.74
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：8 V最大漏极电流 (Abs) (ID)：9 A
最大漏极电流 (ID)：9 A最大漏源导通电阻：0.045 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：S-PDSO-N3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：SQUARE封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：13 W最大脉冲漏极电流 (IDM)：15 A
子类别：Other Transistors表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：NO LEAD
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SIB417AEDK-T1-GE3 数据手册

 浏览型号SIB417AEDK-T1-GE3的Datasheet PDF文件第2页浏览型号SIB417AEDK-T1-GE3的Datasheet PDF文件第3页浏览型号SIB417AEDK-T1-GE3的Datasheet PDF文件第4页浏览型号SIB417AEDK-T1-GE3的Datasheet PDF文件第5页浏览型号SIB417AEDK-T1-GE3的Datasheet PDF文件第6页浏览型号SIB417AEDK-T1-GE3的Datasheet PDF文件第7页 
SiB417AEDK  
Vishay Siliconix  
P-Channel 1.2 V (G-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
•
•
TrenchFET® Power MOSFET  
ID (A)g  
- 9a  
- 9a  
- 9a  
- 8.8  
Thermally Enhanced PowerPAK®  
SC-75 Package  
VDS (V)  
RDS(on) () Max.  
Qg (Typ.)  
0.032 at VGS = - 4.5 V  
0.045 at VGS = - 2.5 V  
0.063 at VGS = - 1.8 V  
0.120 at VGS = - 1.5 V  
0.230 at VGS = - 1.2 V  
- Small Footprint Area  
- Low On-Resistance  
- 8  
11.3 nC  
•
•
•
100 % Rg Tested  
Typical ESD Protection 2500 V  
Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
- 6.4  
PowerPAK SC-75-6L-Single  
1
APPLICATIONS  
D
2
S
• Load Switch for Portable Devices,  
Smart Phones, and Tablet PCs  
- Low Voltage Drop  
D
3
G
D
6
- Space Savings  
S
D
5
Marking Code  
B N X  
1.60 mm  
S
G
1.60 mm  
4
Part # code  
X X X  
D
Ordering Information:  
SiB417AEDK-T1-GE3 (Lead (Pb)-free and Halogen-free)  
Lot Traceability  
and Date code  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
VDS  
Limit  
- 8  
Unit  
V
VGS  
5
- 9a  
T
C = 25 °C  
C = 70 °C  
- 9a  
T
ID  
Continuous Drain Current (TJ = 150 °C)  
- 7.2b, c  
- 5.7b, c  
- 15  
- 9a  
- 2b, c  
13  
TA = 25 °C  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current (t = 300 µs)  
TC = 25 °C  
TA = 25 °C  
TC = 25 °C  
TC = 70 °C  
Continuous Source-Drain Diode Current  
8.4  
PD  
Maximum Power Dissipation  
W
2.4b, c  
1.6b, c  
T
A = 25 °C  
TA = 70 °C  
TJ, Tstg  
- 55 to 150  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
°C  
260  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, f  
Maximum Junction-to-Case (Drain)  
Symbol  
RthJA  
RthJC  
Typical  
41  
Maximum  
Unit  
t 5 s  
51  
°C/W  
Steady State  
7.5  
9.5  
Notes:  
a. Package limited.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under steady state conditions is 105 °C/W.  
g. Based on TC = 25 °C.  
Document Number: 63899  
S12-2333-Rev. A, 01-Oct-12  
For technical questions, contact: pmostechsupport@vishay.com  
This document is subject to change without notice.  
www.vishay.com  
1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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