Datasheet > SiB417EDK

SiB417EDK

更新时间： 2024-09-28 14:54:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	211K
描述
P-Channel 1.2-V (G-S) MOSFET

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SiB417EDK 数据手册

SiB417EDK

Vishay Siliconix

P-Channel 1.2-V (G-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

Definition

- 9.0^a

0.058 at V_GS= - 4.5 V

•

TrenchFET^®Power MOSFET

New Thermally Enhanced PowerPAK^®

SC-75 Package

- 9.0^a

- 4.0

- 2.0

- 0.5

0.080 at V_GS= - 2.5 V

0.100 at V_GS= - 1.8 V

0.130 at V_GS= - 1.5 V

0.250 at V_GS= - 1.2 V

- 8

7.3 nC

- Small Footprint Area

- Low On-Resistance

•

100 % R_gTested

Typical ESD Protection 900 V

Compliant to RoHS Directive 2002/95/EC

PowerPAK SC-75-6L-Single

APPLICATIONS

Load Switch for Portable Devices

•

Marking Code

B G X

Part # code

X X X

Lot Traceability

and Date code

1.60 mm

Ordering Information: SiB417EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

Limit

- 8

Unit

V_GS

- 9^a

_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

- 5.8^{b, c}

T_A= 25 °C

T_A= 70 °C

- 4.6^{b, c}

- 15

- 9^a

- 2^{b, c}

Pulsed Drain Current

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Source-Drain Diode Current

8.4

P_D

Maximum Power Dissipation

2.4^{b, c}

1.6^{b, c}

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 5 s

°C/W

R_thJC

Steady State

7.5

9.5

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 105 °C/W.

Document Number: 68699

S09-1500-Rev. B, 10-Aug-09

www.vishay.com

12 3 4 5 6 7...9

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与SiB417EDK相关器件

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SIB417EDK-T1-GE3	VISHAY	获取价格	TRANSISTOR 5.8 A, 8 V, 0.058 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMP
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