5秒后页面跳转
SIB410DK PDF预览

SIB410DK

更新时间: 2024-11-15 09:25:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 192K
描述
N-Channel 30 V (D-S) MOSFET

SIB410DK 数据手册

 浏览型号SIB410DK的Datasheet PDF文件第2页浏览型号SIB410DK的Datasheet PDF文件第3页浏览型号SIB410DK的Datasheet PDF文件第4页浏览型号SIB410DK的Datasheet PDF文件第5页浏览型号SIB410DK的Datasheet PDF文件第6页浏览型号SIB410DK的Datasheet PDF文件第7页 
New Product  
SiB410DK  
Vishay Siliconix  
N-Channel 30 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) ()  
Qg (Typ.)  
I
D (A)a  
Definition  
0.042 at VGS = 4.5 V  
0.046 at VGS = 2.5 V  
0.052 at VGS = 1.8 V  
TrenchFET® Power MOSFET  
100 % Rg Tested  
9
9
9
30  
5.7 nC  
Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
PowerPAK SC-75-6L-Single  
DC/DC Converters  
Boost Converters  
D
1
D
2
D
Marking Code  
3
G
D
A H X  
X X X  
6
G
Part # code  
S
D
5
Lot Traceability  
and Date code  
1.60 mm  
S
1.60 mm  
4
S
Ordering Information: SiB410DK-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
30  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
A
VGS  
8
9a  
9a  
5.9b, c  
T
C = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
4.7b, c  
IDM  
IS  
Pulsed Drain Current  
20  
9a  
2.1b, c  
13  
T
C = 25 °C  
Continuous Source-Drain Diode Current  
TA = 25 °C  
TC = 25 °C  
TC = 70 °C  
8.4  
PD  
Maximum Power Dissipation  
W
2.5b, c  
1.6b, c  
T
A = 25 °C  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, f  
Symbol  
Typical  
41  
Maximum  
Unit  
RthJA  
RthJC  
t 5 s  
Steady State  
51  
°C/W  
Maximum Junction-to-Case (Drain)  
7.5  
9.5  
Notes:  
a. Package limited, TC = 25 °C.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under steady state conditions is 105 °C/W.  
Document Number: 67020  
S10-2249-Rev. A, 04-Oct-10  
www.vishay.com  
1

与SIB410DK相关器件

型号 品牌 获取价格 描述 数据表
SIB410DK-T1-GE3 VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SIB411DK-T1-E3 VISHAY

获取价格

Transistor
SIB411DK-T1-GE3 VISHAY

获取价格

P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel
SIB412DK-T1-E3 VISHAY

获取价格

MOSFET N-CH 20V 9A SC75-6
SIB412DK-T1-GE3 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SIB413DK-T1-E3 VISHAY

获取价格

Transistor
SIB413DK-T1-GE3 VISHAY

获取价格

Transistor
SIB414DK-T1-GE3 VISHAY

获取价格

Trans MOSFET N-CH 8V 7.9A 6-Pin PowerPAK SC-75 T/R
SIB415DK VISHAY

获取价格

P-Channel 30-V (D-S) MOSFET
SIB415DK-T1-E3 VISHAY

获取价格

Transistor