Datasheet > SI9936BDY_07

SI9936BDY_07

更新时间： 2024-09-15 06:11:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	77K
描述
Dual N-Channel 30-V (D-S) MOSFET

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SI9936BDY_07 数据手册

Si9936BDY

Vishay Siliconix

New Product

Dual N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.035 @ V = 10 V

6.0

4.9

0.052 @ V = 4.5 V

SO-8

Top View

Ordering Information: Si9936BDY—E3

Si9936BDY-T1—E3 (with Tape and Reel)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

= 70_C

6.0

4.8

4.5

3.6

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

1.7

2.0

1.3

0.9

1.1

0.7

= 25_C

= 70_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

62.5

110

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72521

S-32411—Rev. B, 24-Nov-03

www.vishay.com

12 3 4 5 6

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与SI9936BDY_07相关器件

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