Datasheet > SI7384DP

SI7384DP

更新时间： 2024-11-02 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		开关
页数	文件大小	规格书
6页	96K
描述
N-Channel Reduced Qg, Fast Switching MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI7384DP 数据手册

Si7384DP

Vishay Siliconix

N-Channel Reduced Q , Fast Switching MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free available

V_DS(V)

R_DS(on)(Ω)

I_D(A)

TrenchFET^®Gen II Power MOSFET

PWM Optimized for High Efficiency

New Low Thermal Resistance PowerPAK^®

Package with Low 1.07 mm Profile

100 % R_gTested

RoHS

0.0085 at V_GS= 10 V

0.0125 at V_GS= 4.5 V

COMPLIANT

•

APPLICATIONS

PowerPAK SO-8

•

High-Side DC/DC Conversion

- Notebook

- Desktop

- Server

6.15 mm

5.15 mm

Bottom View

N-Channel MOSFET

Ordering Information: Si7384DP-T1-E3 (Lead (Pb)-free)

Si7384DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

Avalanche Current

4.1

1.5

I_AS

E_AS

L = 0.1 mH

Single Pulse Avalanche Energy

T_A= 25 °C

T_A= 70 °C

1.8

1.1

Maximum Power Dissipation^a

P_D

3.2

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{b, c}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

Steady State

Maximum Junction-to-Ambient (MOSFET)^a

Maximum Junction-to-Case (Drain)

R_thJA

°C/W

R_thJC

2.4

3.0

Notes:

a. Surface Mounted on 1” x 1” FR4 board.

b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 72656

S-80439-Rev. C, 03-Mar-08

www.vishay.com

12 3 4 5 6

中文翻译

下载PDF

与SI7384DP相关器件

型号	品牌	获取价格	描述	数据表
SI7384DP-T1-E3	VISHAY	获取价格	TRANSISTOR 11 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK,
SI7384DP-T1-GE3	VISHAY	获取价格	N-CH REDUCED QC, FAST SWITCHING MOSFET - Tape and Reel
SI7386DP	VISHAY	获取价格	N-Channel Reduced Qg, Fast Switching MOSFET
SI7386DP_17	VISHAY	获取价格	N-Channel Reduced Qg, Fast Switching MOSFET
SI7386DP-T1-E3	VISHAY	获取价格	Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK SO T/R
SI7386DP-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK SO T/R
SI7388DP	VISHAY	获取价格	N-Channel Reduced Qg, Fast Switching MOSFET
SI7388DP-T1-E3	VISHAY	获取价格	Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK SO T/R
SI7388DP-T1-GE3	VISHAY	获取价格	N-CH REDUCED QG, FAST SWITCHING MOSFET - Tape and Reel
SI7390DP	VISHAY	获取价格	N-Channel 30-V (D-S) Fast Switching WFET