Datasheet > Si4447ADY

Si4447ADY

更新时间： 2024-09-17 14:54:43

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描述
P-Channel 40 V (D-S) MOSFET

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Si4447ADY 数据手册

Si4447ADY

Vishay Siliconix

www.vishay.com

P-Channel 40 V (D-S) MOSFET

FEATURES

SO-8 Single

• TrenchFET^®power MOSFET

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Load switches, adaptor switch

- Notebook PCs

Top View

PRODUCT SUMMARY

V_DS(V)

-40

_DS(on)max. () at V_GS= -10 V

_DS(on)max. () at V_GS= -4.5 V

0.045

0.062

11.8

Q_gtyp. (nC)

_D(A) ^d

-7.2

P-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

SO-8

Lead (Pb)-free and halogen-free

Si4447ADY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-40

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

-7.2

-5.7

Continuous drain current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

-5.5 ^{a, b}

-4.4 ^{a, b}

-20

Pulsed drain current

I_DM

I_S

_C= 25 °C

-3.5

-2.1 ^{a, b}

Continuous source-drain diode current

T_A= 25 °C

Avalanche current

I_AS

-10

L = 0.1 mH

Single-pulse avalanche energy

E_AS

_C= 25 °C

_C= 70 °C

4.2

2.7

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

2.5 ^{a, b}

1.6 ^{a, b}

-55 to +150

Operating junction and storage temperature range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{a, c}

SYMBOL

TYPICAL

MAXIMUM

UNIT

t  10 s

R_thJA

R_thJF

°C/W

Maximum junction-to-foot

Steady state

Notes

a. Surface mounted on 1" x 1" FR4 board

b. t = 10 s

c. Maximum under steady state conditions is 85 °C/W

d. Based on T_C= 25 °C

S10-2767-Rev. A, 29-Nov-10

Document Number: 67189

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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