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SI4450DY-T1-E3 PDF预览

SI4450DY-T1-E3

更新时间: 2024-11-06 14:44:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 218K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

SI4450DY-T1-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.8
配置:Single最大漏极电流 (Abs) (ID):7.5 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e3
湿度敏感等级:1最高工作温度:150 °C
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W子类别:FET General Purpose Powers
表面贴装:YES端子面层:Matte Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SI4450DY-T1-E3 数据手册

 浏览型号SI4450DY-T1-E3的Datasheet PDF文件第2页浏览型号SI4450DY-T1-E3的Datasheet PDF文件第3页浏览型号SI4450DY-T1-E3的Datasheet PDF文件第4页浏览型号SI4450DY-T1-E3的Datasheet PDF文件第5页浏览型号SI4450DY-T1-E3的Datasheet PDF文件第6页浏览型号SI4450DY-T1-E3的Datasheet PDF文件第7页 
Si4450DY  
Vishay Siliconix  
N-Channel 60-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
7.5  
Available  
0.024 at VGS = 10 V  
0.03 at VGS = 6.0 V  
TrenchFET® Power MOSFET  
60  
6.5  
D
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
S
N-Channel MOSFET  
Ordering Information: Si4450DY-T1-E3 (Lead (Pb)-free)  
Si4450DY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
60  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
TA = 25 °C  
TA = 70 °C  
7.5  
Continuous Drain Current (TJ = 150 °C)a  
ID  
5.5  
A
IDM  
IS  
Pulsed Drain Current  
50  
Continuous Source Current (Diode Conduction)a  
2.1  
TA = 25 °C  
TA = 70 °C  
2.5  
Maximum Power Dissipationa  
PD  
W
1.6  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
Maximum Junction-to-Ambienta  
RthJA  
50  
°C/W  
Notes:  
a. Surface Mounted on FR4 board, t 10 s.  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm  
Document Number: 70144  
S09-0393-Rev. F, 09-Mar-09  
www.vishay.com  
1

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