Datasheet > Si4456DY

Si4456DY

更新时间： 2024-11-21 14:55:43

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威世 - VISHAY		/
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描述
N-Channel 40-V (D-S) MOSFET

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Si4456DY 数据手册

Si4456DY

Vishay Siliconix

N-Channel 40-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)^a

Q_g(Typ.)

Available

TrenchFET^®Gen II Power MOSFET

100 % R_gand UIS Tested

0.0038 at V_GS= 10 V

0.0045 at V_GS= 4.5 V

•

37.5 nC

APPLICATIONS

•

Secondary Rectification

Point of Load

SO-8

Top View

Ordering Information: Si4456DY-T1-E3 (Lead (Pb)-free)

Si4456DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

23^{b, c}

18^{b, c}

I_DM

I_S

Pulsed Drain Current

_C= 25 °C

_A= 25 °C

7.0

3.0^{b, c}

Continuous Source-Drain Diode Current

I_AS

Avalanche Current

L = 0.1 mH

E_AS

Single Pulse Avalanche Energy

_C= 25 °C

_C= 70 °C

_A= 25 °C

7.8

5.0

P_D

Maximum Power Dissipation

3.5^{b, c}

2.2^{b, c}

- 55 to 150

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 5 s

°C/W

R_thJF

Steady State

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 80 °C/W.

Document Number: 73852

S09-0138-Rev. B, 02-Feb-09

www.vishay.com

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