Datasheet > SI4455-B1A-FM

SI4455-B1A-FM

更新时间： 2024-09-16 20:59:35

品牌	Logo	应用领域
芯科 - SILICON		电信电信集成电路
页数	文件大小	规格书
40页	1065K
描述
Telecom Circuit, 1-Func, 3 X 3 MM, LEAD FREE, QFN-20

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中文翻译

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技术参数
数据手册
替代型号

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SI4455-B1A-FM 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	3 X 3 MM, LEAD FREE, QFN-20	Reach Compliance Code：	compliant
HTS代码：	8542.39.00.01	风险等级：	1.56
JESD-30 代码：	S-XQCC-N20	长度：	3 mm
功能数量：	1	端子数量：	20
最高工作温度：	85 °C	最低工作温度：	-40 °C
封装主体材料：	UNSPECIFIED	封装代码：	HVQCCN
封装形状：	SQUARE	封装形式：	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
座面最大高度：	0.9 mm	标称供电电压：	3.3 V
表面贴装：	YES	电信集成电路类型：	TELECOM CIRCUIT
温度等级：	INDUSTRIAL	端子形式：	NO LEAD
端子节距：	0.5 mm	端子位置：	QUAD
宽度：	3 mm	Base Number Matches：	1

SI4455-B1A-FM 数据手册

Si4455

EASY-TO-USE, LOW-CURRENT OOK/(G)FSK SUB-GHZ

TRANSCEIVER

Features

 Frequency

 Max data rate = 500 kbps

range = 283–960 MHz

 Power supply = 1.8 to 3.6 V

 TX and RX 64 byte FIFOs

 Receive

sensitivity = –116 dBm

 Automatic frequency control (AFC)

 Automatic gain control (AGC)

 Integrated battery voltage sensor

 Modulation

(G)FSK

OOK

 Packet handling including

preamble, sync word detection, and

CRC

 Max output power = +13 dBm

 Low active power consumption

10 mA RX

18 mA TX @ +10 dBm

 Low standby current = 50 nA

 Low BOM

 20-Pin 3x3 mm QFN package

Pin Assignments

Applications

 Remote control

 Remote keyless entry

 Home automation

 Industrial control

 Sensor networks

 Health monitors

 Home security and alarm

 Telemetry

GND

SDN

RXp

RXn

20 19 18 17 16 nSEL

15 SDI

 Garage and gate openers

14 SDO

Si4455

Description

13 SCLK

12 nIRQ

Silicon Laboratories’ Si4455 is an easy-to-use, low current, sub-GHz

EZRadio

transceiver. Covering all major bands, it combines

GND

10 11 GPIO1

plug-and-play simplicity with the flexibility needed to handle a wide variety

of applications. The compact 3x3 mm package size combined with a low

external BOM count makes the Si4455 both space efficient and cost

effective. The +13 dBm output power and excellent sensitivity of

–116 dBm allows for a longer operating range, while the low current

consumption of 18 mA TX (at 10 dBm), 10 mA RX, and 50 nA standby,

provides for superior battery life. By fully integrating all components from

the antenna to the GPIO or SPI interface to the MCU, the Si4455 makes

realizing this performance in an application easy. Design simplicity is

further exemplified in the Wireless Development Suite (WDS) user

interface module. This configuration module provides simplified

programming options for a broad range of applications in an easy to use

format that results in both a faster and lower risk development. The

Si4455 is capable of supporting major worldwide regulatory standards

such as FCC, ETSI, ARIB and China regulatory standards.

Patents pending

Rev 1.1 10/13

Si4455

12 3 4 5 6 7...40

中文翻译

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SI4455-B1A-FM 替代型号

型号	品牌	替代类型	描述	数据表
SI4455-B1A-FMR	SILICON	完全替代	Telecom Circuit, 1-Func, 3 X 3 MM, LEAD FREE, QFN-20

与SI4455-B1A-FM相关器件

型号	品牌	获取价格	描述	数据表
SI4455-B1A-FMR	SILICON	获取价格	Telecom Circuit, 1-Func, 3 X 3 MM, LEAD FREE, QFN-20
Si4455-C2A-GM	SILICON	获取价格	EASY-TO-USE, LOW-CURRENT OOK/(G)FSK SUB-GHZ TRANSCEIVER, TRANSMITTER, AND RECEIVER
SI4455-C2A-GMR	SILICON	获取价格	EASY-TO-USE, LOW-CURRENT OOK/(G)FSK SUB-GHZ TRANSCEIVER, TRANSMITTER, AND RECEIVER
SI4455DY	VISHAY	获取价格	P-Channel 150-V (D-S) MOSFET
SI4455DY-T1-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-
Si4456DY	VISHAY	获取价格	N-Channel 40-V (D-S) MOSFET
SI4456DY-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
SI4456DY-T1-E3	VISHAY	获取价格	Trans MOSFET N-CH 40V 23A 8-Pin SOIC N T/R
SI4456DY-T1-GE3	VISHAY	获取价格	N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel
SI4459ADY	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET

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