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SI4447DY-T1-E3 PDF预览

SI4447DY-T1-E3

更新时间: 2024-11-06 22:59:43
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲光电二极管晶体管
页数 文件大小 规格书
6页 103K
描述
MOSFET P-CH 40V 3.3A 8-SOIC

SI4447DY-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:7.11雪崩能效等级(Eas):13 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):3.3 A最大漏极电流 (ID):3.3 A
最大漏源导通电阻:0.054 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2 W最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI4447DY-T1-E3 数据手册

 浏览型号SI4447DY-T1-E3的Datasheet PDF文件第2页浏览型号SI4447DY-T1-E3的Datasheet PDF文件第3页浏览型号SI4447DY-T1-E3的Datasheet PDF文件第4页浏览型号SI4447DY-T1-E3的Datasheet PDF文件第5页浏览型号SI4447DY-T1-E3的Datasheet PDF文件第6页 
Si4447DY  
Vishay Siliconix  
P-Channel 40-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)  
Definition  
TrenchFET® Power MOSFET  
100 % Rg Tested  
0.054 at VGS = - 10 V  
0.072 at VGS = - 4.5 V  
- 4.5  
- 3.9  
- 40  
9
100 % UIS Tested  
APPLICATIONS  
CCFL Inverter  
SO-8  
S
S
S
S
G
1
2
3
4
8
7
6
5
D
D
G
D
D
Top View  
D
P-Channel MOSFET  
Ordering Information: Si4447DY-T1-E3 (Lead (Pb)-free)  
Si4447DY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 40  
16  
V
VGS  
TA = 25 °C  
A = 70 °C  
- 4.5  
- 3.3  
- 2.7  
Continuous Drain Current (TJ = 150 °C)a  
ID  
T
- 3.6  
IDM  
IS  
Pulsed Drain Current  
- 30  
A
Continuous Source Current (Diode Conduction)a  
Avalanche Current  
- 1.7  
- 0.9  
IAS  
EAS  
16  
13  
L = 0.1 mH  
Single Pulse Avalanche Energy  
mJ  
W
TA = 25 °C  
TA = 70 °C  
2
1.1  
0.7  
Maximum Power Dissipationa  
PD  
1.3  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
50  
Maximum  
62.5  
Unit  
t 10 s  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Foot (Drain)  
RthJA  
RthJF  
Steady State  
Steady State  
85  
110  
°C/W  
30  
40  
Notes:  
a. Surface mounted on 1" x 1" FR4 board.  
Document Number: 73662  
S09-0322-Rev. B, 02-Mar-09  
www.vishay.com  
1

SI4447DY-T1-E3 替代型号

型号 品牌 替代类型 描述 数据表
SI4447DY-T1-GE3 VISHAY

类似代替

MOSFET P-CH 40V 3.3A 8-SOIC

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