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SI4450DY PDF预览

SI4450DY

更新时间: 2024-11-18 22:43:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管光电二极管
页数 文件大小 规格书
5页 99K
描述
60V N-Channel PowerTrench MOSFET

SI4450DY 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SO-8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.75
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):8 A最大漏极电流 (ID):8 A
最大漏源导通电阻:0.02 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI4450DY 数据手册

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January 2001  
Si4450DY  
60V N-Channel PowerTrench MOSFET  
Features  
General Description  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor's advanced PowerTrench process that  
has been especially tailored to minimize on-state  
resistance and yet maintain superior switching  
performance.  
8 A, 60 V. RDS(on) = 0.020 @ VGS = 10 V  
DS(on) = 0.025 @ VGS = 6 V.  
R
Low gate charge (30nC typical).  
Fast switching speed.  
These devices are well suited for low voltage and battery  
powered applications where low in-line power loss and  
fast switching are required.  
High performance trench technology for extremely  
low RDS(ON)  
.
Applications  
High power and current handling capability.  
DC/DC converter  
Load switch  
Motor drives  
D
5
6
7
8
4
3
2
1
D
D
D
G
S
S
SO-8  
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
Gate-Source Voltage  
60  
V
V
A
±20  
Drain Current - Continuous  
- Pulsed  
(Note 1a)  
8
50  
PD  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
2.5  
W
1.2  
1
(Note 1c)  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
50  
25  
RθJA  
°C/W  
°C/W  
RθJC  
Package Outlines and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape Width  
Quantity  
4450  
Si4450DY  
13’’  
12mm  
2500 units  
2001 Fairchild Semiconductor International  
Si4450DY Rev. A  

SI4450DY 替代型号

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