Datasheet > SI3415B-TP

SI3415B-TP

更新时间： 2024-11-05 21:10:11

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	428K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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SI3415B-TP 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.65
Base Number Matches：	1

SI3415B-TP 数据手册

SI3415B

Features

•

High Density Cell Design For Ultra Low R_DS(on)

High Speed Switching

P-Channel

ESD Protected Up to 2.5KV (HBM)

Trench Power LV MOSFET Technology

Epoxy Meets UL 94 V-0 Flammability Rating

Moisture Sensitivity Level 1

Enhancement Mode

Field Effect Transistor

Halogen Free Available Upon Request By Adding Suffix "-HF"

Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

Maximum Ratings

•

Operating Junction Temperature Range : -55°C to +150°C

SOT-23

Storage Temperature Range: -55°C to +150°C

Thermal Resistance: 96°C/W Junction to Ambient^(Note1)

Parameter

Rating

-20

Symbol

V_DS

Unit

Drain-Source Voltage

Gate-Source Volltage

V_GS

±12

-5.6

-4.5

-23

Drain Current

T_A=25°C Steady State

T_A=70°C Steady State

Pulsed Drain Current^(Note2)

I_D

I_DM

P_D

DIMENSIONS

Total Power Dissipation

1.3

INCHES

DIM

NOTE

MIN MAX MIN MAX

0.110 0.120 2.80 3.04

0.083 0.104 2.10 2.64

0.047 0.055 1.20 1.40

0.034 0.041 0.85 1.05

0.067 0.083 1.70 2.10

0.018 0.024 0.45 0.60

Note 1.Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.

2.Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.

Internal Structure:

0.01 0.15

0.0004 0.006

0.035 0.043 0.90 1.10

0.003 0.007 0.08 0.18

0.014 0.020 0.35 0.51

0.020

0.50

0.007

0.20

Suggested Solder Pad Layout

0.031

0.800

0.035

0.900

0.079

2.000

inches

0.037

0.950

0.037

0.950

Rev.3-1-01012019

1/4

MCCSEMI.COM

12 3 4

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