Datasheet > SI3415D

SI3415D

更新时间： 2024-11-06 18:08:59

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
6页	671K
描述
Tape&Reel:3Kpcs/Reel;

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数据手册

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SI3415D 数据手册

SI3415D

Features

•

Trench LV MOSFET Technology

ESD Protected Up To 2KV(HBM)

Exceptional On-Resistance And Maximum DC Current Capability

Moisture Sensitivity Level 1

Halogen Free."Green"Device^（Note1)

Epoxy Meets UL 94 V-0 Flammability Rating

Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

P-CHANNEL

MOSFET

Maximum Ratings

•

Operating Junction Temperature Range : -55°C to +150°C

Storage Temperature Range: -55°C to +150°C

Thermal Resistance: 120°C/W Junction to Ambient^（Note2)

SOT-23

Parameter

Rating

Symbol

V_DS

Unit

Drain-Source Voltage

Gate-Source Volltage

-20

±10

-3.9

-2.4

-16

V_GS

T_A=25℃

I_D

Continuous Drain Current

T_A=100℃

Pulsed Drain Current^(Note3)

I_DM

Total Power Dissipation^(Note4)

P_D

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DIMENSIONS

INCHES

DIM

NOTE

MIN MAX MIN MAX

0.110 0.120 2.80 3.04

0.083 0.104 2.10 2.64

0.047 0.055 1.20 1.40

0.034 0.041 0.85 1.05

0.067 0.083 1.70 2.10

0.018 0.024 0.45 0.60

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0.01 0.15

0.0004 0.006

0.035 0.043 0.90 1.10

0.003 0.007 0.08 0.18

0.012 0.020 0.30 0.51

Internal Structure and Marking Code

0.020

0.50

0.007

0.20

Suggested Solder Pad Layout

0.031

0.800

1. GATE

0.035

0.900

2. SOURCE

3415C

3. DRAIN

0.079

2.000

inches

0.037

0.950

0.037

0.950

Rev.4-1-03192024

1/6

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