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RN2709JE PDF预览

RN2709JE

更新时间： 2024-11-04 11:58:59
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
6页 340K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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RN2709JE 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F5针数：5
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.62
其他特性：BUILT-IN BIAS RESISTOR RATIO IS 0.47最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：70JESD-30 代码：R-PDSO-F5
元件数量：2端子数量：5
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.1 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：200 MHz

RN2709JE 数据手册

 浏览型号RN2709JE的Datasheet PDF文件第2页浏览型号RN2709JE的Datasheet PDF文件第3页浏览型号RN2709JE的Datasheet PDF文件第4页浏览型号RN2709JE的Datasheet PDF文件第5页浏览型号RN2709JE的Datasheet PDF文件第6页 
RN2707JE~RN2709JE  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)  
RN2707JE,RN2708JE,RN2709JE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
•
•
Two devices are incorporated into an Extreme-Super-Mini (5 pin) package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more compact  
equipment and lowers assembly cost.  
•
•
A wide range of resistor values are available for use in various circuit  
designs.  
Complementary to RN1707JE to RN1709JE  
Equivalent Circuit and Bias Resistor Values  
1.BASE1  
2.EMITTER  
3.BASE2  
4.COLLECTOR2  
5.COLLECTOR1  
(B1)  
(E)  
(B2)  
(C2)  
(C1)  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN2707JE  
RN2708JE  
RN2709JE  
10  
22  
47  
47  
47  
22  
R1  
B
JEDEC  
JEITA  
―
―
E
TOSHIBA  
2-2P1D  
Weight: 3 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
Equivalent Circuit  
(top view)  
V
V
−50  
−50  
V
V
CBO  
CEO  
RN2707JE  
to 2709JE  
Collector-emitter voltage  
5
4
RN2707JE  
RN2708JE  
RN2709JE  
−6  
Q1  
Q2  
Emitter-base voltage  
V
C
V
−7  
EBO  
−15  
Collector current  
I
−100  
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
1
2
3
RN2707JE  
to 2709JE  
T
150  
j
T
−55~150  
°C  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
1
2010-05-14  
123456

中文翻译

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