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RN2709JE(TE85L,F) PDF预览

RN2709JE(TE85L,F)

更新时间: 2024-11-04 20:04:35
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
6页 334K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR

RN2709JE(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:1.79最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):70元件数量:2
极性/信道类型:PNP最大功率耗散 (Abs):0.1 W
子类别:BIP General Purpose Small Signal表面贴装:YES
晶体管元件材料:SILICONBase Number Matches:1

RN2709JE(TE85L,F) 数据手册

 浏览型号RN2709JE(TE85L,F)的Datasheet PDF文件第2页浏览型号RN2709JE(TE85L,F)的Datasheet PDF文件第3页浏览型号RN2709JE(TE85L,F)的Datasheet PDF文件第4页浏览型号RN2709JE(TE85L,F)的Datasheet PDF文件第5页浏览型号RN2709JE(TE85L,F)的Datasheet PDF文件第6页 
RN2707JE~RN2709JE  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)  
RN2707JE, RN2708JE, RN2709JE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
Two devices are incorporated into an Extreme-Super-Mini (5 pin) package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more compact  
equipment and lowers assembly cost.  
A wide range of resistor values are available for use in various circuit  
designs.  
Complementary to RN1707JE to RN1709JE  
Equivalent Circuit and Bias Resistor Values  
1.BASE1  
2.EMITTER  
3.BASE2  
4.COLLECTOR2  
5.COLLECTOR1  
(B1)  
(E)  
(B2)  
(C2)  
(C1)  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN2707JE  
RN2708JE  
RN2709JE  
10  
22  
47  
47  
47  
22  
R1  
B
JEDEC  
JEITA  
E
TOSHIBA  
2-2P1D  
Weight: 3 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
Equivalent Circuit  
(top view)  
V
50  
50  
V
V
CBO  
RN2707JE  
to 2709JE  
Collector-emitter voltage  
V
CEO  
5
4
RN2707JE  
RN2708JE  
RN2709JE  
6  
Emitter-base voltage  
V
V
Q1  
Q2  
7  
EBO  
15  
Collector current  
I
100  
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
C
RN2707JE  
to 2709JE  
1
2
3
T
150  
j
T
stg  
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Start of commercial production  
2000-06  
1
2014-03-01  

RN2709JE(TE85L,F) 替代型号

型号 品牌 替代类型 描述 数据表
L1CU-RYL1000000000 LUMILEDS

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