Datasheet > RFD14N06L

RFD14N06L

更新时间： 2024-11-23 22:24:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
8页	87K
描述
14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

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数据手册
替代型号

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RFD14N06L 数据手册

RFD14N06L, RFD14N06LSM, RFP14N06L

Data Sheet

July 1999

File Number 4088.3

14A, 60V, 0.100 Ohm, Logic Level,

N-Channel Power MOSFETs

Features

• 14A, 60V

These are N-Channel power MOSFETs manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits, gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers and relay drivers. This performance is accomplished

through a special gate oxide design which provides full rated

conductance at gate bias in the 3V - 5V range, thereby

facilitating true on-off power control directly from logic level

(5V) integrated circuits.

• r

= 0.100Ω

DS(ON)

• Temperature Compensating PSPICE Model

• Can be Driven Directly from CMOS, NMOS, and TTL

Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175 C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA09870.

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

14N06L

RFD14N06L

TO-251AA

RFD14N06LSM

RFP14N06L

TO-252AA

TO-220AB

14N06L

FP14N06L

NOTE: When ordering, use the entire part number. Add the suffix 9A, to

obtain the TO-252AA variant in tape and reel, i.e. RFD14N06LSM9A.

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

GATE

SOURCE

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

6-1

12 3 4 5 6 7 8

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RFD14N06L 替代型号

型号	品牌	替代类型	描述	数据表
IRFR024NTRPBF	INFINEON	功能相似	HEXFETÂ® Power MOSFET
IRF9Z34NPBF	INFINEON	功能相似	HEXFET㈢ POWER MOSFET
NTD3055L104T4G	ONSEMI	功能相似	Power MOSFET

与RFD14N06L相关器件

型号	品牌	获取价格	描述	数据表
RFD14N06LSM	INTERSIL	获取价格	14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs
RFD14N06LSM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
RFD14N06LSM9A	FAIRCHILD	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
RFD14N06SM	RENESAS	获取价格	14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
RFD14N06SM9A	RENESAS	获取价格	14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
RFD15N06LE	INTERSIL	获取价格	15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs
RFD15N06LESM	INTERSIL	获取价格	15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs
RFD15N06LESM9A	FAIRCHILD	获取价格	Power Field-Effect Transistor, 15A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Met
RFD15N06LESM9A	RENESAS	获取价格	15A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
RFD15P05	INTERSIL	获取价格	15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs

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