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RFD16N02 PDF预览

RFD16N02

更新时间: 2024-09-15 22:20:59
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
8页 78K
描述
16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET

RFD16N02 数据手册

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RFD16N02L,  
RFD16N02LSM  
16A, 20V, 0.022 Ohm, N-Channel,  
Logic Level, Power MOSFET  
May 1997  
Features  
Description  
• 16A, 20V  
• r = 0.022Ω  
The RFD16N02L and RFD16N02LSM are N-Channel power  
MOSFETs manufactured using the MegaFET process. This  
process, which uses feature sizes approaching those of  
LSI circuits, gives optimum utilization of silicon, resulting in  
outstanding performance. They were designed for use in  
applications such as switching regulators, switching convert-  
ers, motor drivers and relay drivers. This performance is  
accomplished through a special gate oxide design which  
provides full rated conductance at gate bias in the 3V to 5V  
range, thereby facilitating true on-off power control directly  
from logic level (5V) integrated circuits.  
DS(ON)  
Temperature Compensating PSPICE Model  
• Can be Driven Directly from CMOS, NMOS,  
and TTL Circuits  
• Peak Current vs Pulse Width Curve  
• UIS Rating Curve  
o
• 175 C Operating Temperature  
Ordering Information  
Symbol  
PART NUMBER  
RFD16N02L  
PACKAGE  
TO-251AA  
TO-252AA  
BRAND  
16N02L  
16N02L  
D
RFD16N02LSM  
NOTE: When ordering, use the entire part number. Add the suffix  
9A, to obtain the TO-252AA variant in tape and reel, e.g.  
RFD16N02LSM9A.  
G
S
Formerly developmental type TA49243.  
Packaging  
JEDEC TO-251AA  
JEDEC TO-252AA  
SOURCE  
DRAIN  
GATE  
DRAIN  
(FLANGE)  
DRAIN  
(FLANGE)  
GATE  
SOURCE  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
File Number 4341  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
1

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