是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.69 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 16 A | 最大漏极电流 (ID): | 16 A |
最大漏源导通电阻: | 0.025 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-251AA | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 90 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RFD16N03LSM | INTERSIL |
获取价格 |
16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs | |
RFD16N03LSM | FAIRCHILD |
获取价格 |
16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs | |
RFD16N03LSM9A | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 16A I(D) | TO-252AA | |
RFD16N05 | FAIRCHILD |
获取价格 |
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs | |
RFD16N05 | INTERSIL |
获取价格 |
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs | |
RFD16N05 | ROCHESTER |
获取价格 |
16A, 50V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | |
RFD16N05_03 | FAIRCHILD |
获取价格 |
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs | |
RFD16N05L | FAIRCHILD |
获取价格 |
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs | |
RFD16N05L | INTERSIL |
获取价格 |
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs | |
RFD16N05LSM | FAIRCHILD |
获取价格 |
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs |