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RFD16N03L PDF预览

RFD16N03L

更新时间: 2024-11-01 22:43:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关
页数 文件大小 规格书
7页 134K
描述
16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs

RFD16N03L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.69
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):16 A最大漏极电流 (ID):16 A
最大漏源导通电阻:0.025 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):90 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

RFD16N03L 数据手册

 浏览型号RFD16N03L的Datasheet PDF文件第2页浏览型号RFD16N03L的Datasheet PDF文件第3页浏览型号RFD16N03L的Datasheet PDF文件第4页浏览型号RFD16N03L的Datasheet PDF文件第5页浏览型号RFD16N03L的Datasheet PDF文件第6页浏览型号RFD16N03L的Datasheet PDF文件第7页 
RFD16N03L,  
S E M I C O N D U C T O R  
RFD16N03LSM  
16A, 30V, Avalanche Rated N-Channel Logic Level  
Enhancement-Mode Power MOSFETs  
December 1995  
Features  
Packaging  
JEDEC TO-251AA  
• 16A, 30V  
SOURCE  
DRAIN  
GATE  
• rDS(ON) = 0.022Ω  
Temperature Compensating PSPICE Model  
DRAIN (FLANGE)  
• Can be Driven Directly from CMOS, NMOS,  
and TTL Circuits  
• Peak Current vs Pulse Width Curve  
• UIS Rating Curve  
JEDEC TO-252AA  
• +175oC Operating Temperature  
DRAIN (FLANGE)  
Description  
GATE  
SOURCE  
The RFD16N03L and RFD16N03LSM are N-channel power  
MOSFETs manufactured using the MegaFET process. This  
process, which uses feature sizes approaching those of  
LSI circuits, gives optimum utilization of silicon, resulting in  
outstanding performance. They were designed for use in  
applications such as switching regulators, switching convert-  
ers, motor drivers and relay drivers. This performance is  
accomplished through a special gate oxide design which  
provides full rated conductance at gate bias in the 3V - 5V  
range, thereby facilitating true on-off power control directly  
from logic level (5V) integrated circuits.  
Symbol  
DRAIN  
GATE  
PACKAGE AVAILABILITY  
PART NUMBER  
RFD16N03L  
RFD16N03LSM  
PACKAGE  
TO-251AA  
TO-252AA  
BRAND  
16N03L  
16N03L  
SOURCE  
NOTE: When ordering, use the entire part number. Add the suffix  
9A, to obtain the TO-252AA variant in tape and reel, e.g.  
RFD16N03LSM9A.  
Formerly developmental type TA49030.  
o
Absolute Maximum Ratings T = +25 C  
C
RFD16N03L,  
RFD16N03LSM  
UNITS  
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
30  
30  
V
V
V
DSS  
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
DGR  
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
Drain Current  
±10  
GS  
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
16  
A
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
Refer to Peak Current Curve  
DM  
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E  
Refer to UIS Curve  
AS  
Power Dissipation  
o
T
= +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
90  
0.606  
W
W/ C  
C
D
o
o
Derate above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
o
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T  
, T  
-55 to +175  
260  
C
STG  
J
o
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T  
C
L
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  
File Number 4013.1  
Copyright © Harris Corporation 1995  
5-31  

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