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RFD16N05SM PDF预览

RFD16N05SM

更新时间: 2024-11-01 22:43:59
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 95K
描述
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

RFD16N05SM 数据手册

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RFD16N05, RFD16N05SM  
Data Sheet  
July 1999  
File Number 2267.5  
16A, 50V, 0.047 Ohm, N-Channel Power  
MOSFETs  
Features  
• 16A, 50V  
The RFD16N05 and RFD16N05SM N-channel power  
MOSFETs are manufactured using the MegaFET process.  
This process, which uses feature sizes approaching those of  
LSI integrated circuits, gives optimum utilization of silicon,  
resulting in outstanding performance. They were designed  
for use in applications such as switching regulators,  
• r  
= 0.047  
DS(ON)  
®
Temperature Compensating PSPICE Model  
• Peak Current vs Pulse Width Curve  
• UIS Rating Curve  
o
switching converters, motor drivers, and relay drivers. These  
transistors can be operated directly from integrated circuits.  
• 175 C Operating Temperature  
• Related Literature  
Formerly developmental type TA09771.  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Ordering Information  
Symbol  
PART NUMBER  
PACKAGE  
TO-251AA  
TO-252AA  
BRAND  
F16N05  
F16N05  
D
RFD16N05  
RFD16N05SM  
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to  
obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A.  
S
Packaging  
JEDEC TO-251AA  
JEDEC TO-252AA  
DRAIN (FLANGE)  
SOURCE  
DRAIN  
GATE  
DRAIN (FLANGE)  
GATE  
SOURCE  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
PSPICE® is a registered trademark of MicroSim Corporation.  
4-420  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  

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