是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252AA | 包装说明: | TO-252AA, 3 PIN |
针数: | 4 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.1 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 50 V | 最大漏极电流 (ID): | 16 A |
最大漏源导通电阻: | 0.047 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 72 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 125 ns |
最大开启时间(吨): | 65 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RFD16N05SM9A_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Met | |
RFD16N05SM9A_NL | ROCHESTER |
获取价格 |
16A, 50V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA VARIANT, 3 PIN | |
RFD16N06 | INTERSIL |
获取价格 |
16A, 60V, 0.047 Ohm, N-Channel Power MOSFET | |
RFD16N06 | RENESAS |
获取价格 |
16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | |
RFD16N06LE | INTERSIL |
获取价格 |
16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs | |
RFD16N06LE | RENESAS |
获取价格 |
16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | |
RFD16N06LESM | FAIRCHILD |
获取价格 |
16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs | |
RFD16N06LESM | INTERSIL |
获取价格 |
16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs | |
RFD16N06LESM | RENESAS |
获取价格 |
16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | |
RFD16N06LESM9A | FAIRCHILD |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-252AA |