Datasheet > RFD16N03LSM

RFD16N03LSM

更新时间： 2024-09-15 22:14:27

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关
页数	文件大小	规格书
8页	110K
描述
16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs

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RFD16N03LSM 数据手册

RFD16N03L, RFD16N03LSM

Data Sheet

April 1999

File Number 4013.2

16A, 30V, 0.025 Ohm, Logic Level,

N-Channel Power MOSFETs

Features

• 16A, 30V

These are N-Channel power MOSFETs manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI circuits, gives optimum

utilization of silicon, resulting in outstanding performance.

They were designed for use in applications such as

switching regulators, switching converters, motor drivers and

relay drivers. This performance is accomplished through a

special gate oxide design which provides full rated

conductance at gate bias in the 3V to 5V range, thereby

facilitating true on-off power control directly from logic level

(5V) integrated circuits.

• r

= 0.025Ω

DS(ON)

• Temperature Compensating PSPICE™ Model

• Can be Driven Directly from CMOS, NMOS,

and TTL Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175 C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA49030.

Ordering InformationS

Symbol

PART NUMBER

PACKAGE

TO-251AA

TO-252AA

BRAND

16N03L

DRAIN

RFD16N03L

RFD16N03LSM

NOTE: When ordering, use the entire part number. Add the suffix 9A,

to obtain the TO-252AA variant in tape and reel, e.g. RFD16N03LSM9A.

GATE

SOURCE

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE™ is a trademark of MicroSim Corporation.

6-156

12 3 4 5 6 7 8

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