Datasheet > RFD16N05LSM

RFD16N05LSM

更新时间： 2024-11-01 22:43:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
6页	51K
描述
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

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RFD16N05LSM 数据手册

RFD16N05L, RFD16N05LSM

Data Sheet

April 1999

File Number 2269.2

16A, 50V, 0.047 Ohm, Logic Level,

N-Channel Power MOSFETs

Features

• 16A, 50V

These are N-Channel logic level power MOSFETs

• r

= 0.047Ω

DS(ON)

manufactured using the MegaFET process. This process,

which uses feature sizes approaching those of LSI

integrated circuits gives optimum utilization of silicon,

resulting in outstanding performance. They were designed

for use with logic level (5V) driving sources in applications

such as programmable controllers, automotive switching,

switching regulators, switching converters, motor relay

drivers and emitter switches for bipolar transistors. This

performance is accomplished through a special gate oxide

design which provides full rated conductance at gate biases

in the 3V to 5V range, thereby facilitating true on-off power

control directly from logic circuit supply voltages.

• UIS SOA Rating Curve (Single Pulse)

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from CMOS, NMOS, TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

Formerly developmental type TA09871.

• Related Literature

Ordering Information

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

PART NUMBER

RFD16N05L

RFD16N05LSM

PACKAGE

TO-251AA

TO-252AA

BRAND

RFD16N05L

RFD16N05LSM

Symbol

NOTE: When ordering, include the entire part number. Add the suffix 9A

to obtain the TO-252AA variant in tape and reel, i.e. RFD16N05LSM9A

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

6-163

12 3 4 5 6

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与RFD16N05LSM相关器件

型号	品牌	获取价格	描述	数据表
RFD16N05LSM_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Met
RFD16N05LSM9A	ONSEMI	获取价格	N 沟道逻辑电平功率 MOSFET 50V，16A，47mΩ
RFD16N05LSM9A	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时
RFD16N05LSM9A_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Met
RFD16N05SM	FAIRCHILD	获取价格	16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
RFD16N05SM	INTERSIL	获取价格	16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
RFD16N05SM_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Met
RFD16N05SM_NL	ROCHESTER	获取价格	16A, 50V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
RFD16N05SM9A	FAIRCHILD	获取价格	Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Met
RFD16N05SM9A	RENESAS	获取价格	16A, 50V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

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