Datasheet > RFD16N05LSM9A

RFD16N05LSM9A

更新时间： 2024-11-03 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	488K
描述
种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:16A;Vgs(th)(V):±10

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RFD16N05LSM9A 数据手册

RFD16N05

60V N-Channel MOSFET

UMW

Features

●

(V) =60V

< 47 Ω

= 5V)

DS(ON)

UIS SOA Rating Curve (Single Pulse)

Design Optimized for 5V Gate Drives

Can be Driven Directly from CMOS, NMOS, TTL Circuits

SOA is Power Dissipation Limited

Nanosecond Switching Speeds

Linear Transfer Characteristics

●

High Input Impedance

Majority Carrier Device

Absolute Maximum Ratings

= 25 C, Unless Otherwise Specified

Drain to Source Voltage (Note 1)

V_DS

Drain to Gate Voltage (R

= 20kΩ) (Note 1)

V_DGR

Continuous Drain Current

I_D

I_DM

Pulsed Drain Current (Note 3)

Gate to Source Voltage

V_GS

P_D

±10

Maximum Power Dissipation

0.48

W/ C

Derate Above 25 C

Operating and Storage Temperature

-55 to 150

T_J, T_STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

T_L

300

260

Package Body for 10s, See Techbrief 334

T_pkg

nly rating and operation of the

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress o

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. T = 25 C to 125 C.

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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与RFD16N05LSM9A相关器件

型号	品牌	获取价格	描述	数据表
RFD16N05LSM9A_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Met
RFD16N05SM	FAIRCHILD	获取价格	16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
RFD16N05SM	INTERSIL	获取价格	16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
RFD16N05SM_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Met
RFD16N05SM_NL	ROCHESTER	获取价格	16A, 50V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
RFD16N05SM9A	FAIRCHILD	获取价格	Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Met
RFD16N05SM9A	RENESAS	获取价格	16A, 50V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
RFD16N05SM9A	ONSEMI	获取价格	N 沟道，功率 MOSFET，50V，16A，47mΩ
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RFD16N05SM9A_NL	ROCHESTER	获取价格	16A, 50V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA VARIANT, 3 PIN