Datasheet > RFD16N05

RFD16N05

更新时间： 2024-11-05 22:43:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	95K
描述
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

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RFD16N05 数据手册

RFD16N05, RFD16N05SM

Data Sheet

July 1999

File Number 2267.5

16A, 50V, 0.047 Ohm, N-Channel Power

MOSFETs

Features

• 16A, 50V

The RFD16N05 and RFD16N05SM N-channel power

MOSFETs are manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of

LSI integrated circuits, gives optimum utilization of silicon,

resulting in outstanding performance. They were designed

for use in applications such as switching regulators,

• r

= 0.047Ω

DS(ON)

• Temperature Compensating PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

switching converters, motor drivers, and relay drivers. These

transistors can be operated directly from integrated circuits.

• 175 C Operating Temperature

• Related Literature

Formerly developmental type TA09771.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

Symbol

PART NUMBER

PACKAGE

TO-251AA

TO-252AA

BRAND

F16N05

RFD16N05

RFD16N05SM

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A.

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

4-420

12 3 4 5 6 7 8

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RFD16N05_03	FAIRCHILD	获取价格	16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
RFD16N05L	FAIRCHILD	获取价格	16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
RFD16N05L	INTERSIL	获取价格	16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
RFD16N05LSM	FAIRCHILD	获取价格	16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
RFD16N05LSM	INTERSIL	获取价格	16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
RFD16N05LSM_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Met
RFD16N05LSM9A	ONSEMI	获取价格	N 沟道逻辑电平功率 MOSFET 50V，16A，47mΩ
RFD16N05LSM9A	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时
RFD16N05LSM9A_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Met
RFD16N05SM	FAIRCHILD	获取价格	16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs