IRF9Z34NPBF

更新时间： 2024-09-09 03:15:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	241K
描述
HEXFET㈢ POWER MOSFET

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中文翻译

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数据手册
替代型号

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IRF9Z34NPBF 数据手册

PD - 94983

IRF9Z34NPbF

HEXFET^®Power MOSFET

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

V_DSS= -55V

l P-Channel

l Fully Avalanche Rated

R_DS(on)= 0ꢀ10Ω

l Lead-Free

Description

I_D= -19A

FifthGenerationHEXFETsfromInternationalRectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area# This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications#

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipation

levels to approximately 50 watts# The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry#

TO-220AB

Absolute Maximum Ratings

Parameter

Maxꢀ

-19

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-14

-68

P_D@T_C= 25°C

Power Dissipation

68W

0(45

Linear Derating Factor

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

180

-10

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

6(8mJ

-5(0

V/ns

°C

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 ꢀ1(6mm from case )

10 lbfin ꢀ1(1Nm)

Thermal Resistance

Parameter

Junction-to-Case

Typꢀ

Maxꢀ

Units

R_θJC

R_θCS

R_θJA

2(2

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0(50

°C/W

02/05/04

12 3 4 5 6 7...9

中文翻译

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IRF9Z34NPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRLZ24NPBF	INFINEON	类似代替	Logic-Level Gate Drive, Advanced Process Technology
IRFZ24NPBF	INFINEON	类似代替	HEXFET Power MOSFET
IRFR024NTRPBF	INFINEON	功能相似	HEXFETÂ® Power MOSFET

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