RFD16N03

更新时间： 2024-11-05 22:43:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	134K
描述
16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs

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RFD16N03 数据手册

RFD16N03L,

S E M I C O N D U C T O R

RFD16N03LSM

16A, 30V, Avalanche Rated N-Channel Logic Level

Enhancement-Mode Power MOSFETs

December 1995

Features

Packaging

JEDEC TO-251AA

• 16A, 30V

SOURCE

DRAIN

GATE

• r_DS(ON)= 0.022Ω

• Temperature Compensating PSPICE Model

DRAIN (FLANGE)

• Can be Driven Directly from CMOS, NMOS,

and TTL Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

JEDEC TO-252AA

• +175^oC Operating Temperature

DRAIN (FLANGE)

Description

GATE

SOURCE

The RFD16N03L and RFD16N03LSM are N-channel power

MOSFETs manufactured using the MegaFET process. This

process, which uses feature sizes approaching those of

LSI circuits, gives optimum utilization of silicon, resulting in

outstanding performance. They were designed for use in

applications such as switching regulators, switching convert-

ers, motor drivers and relay drivers. This performance is

accomplished through a special gate oxide design which

provides full rated conductance at gate bias in the 3V - 5V

range, thereby facilitating true on-off power control directly

from logic level (5V) integrated circuits.

Symbol

DRAIN

GATE

PACKAGE AVAILABILITY

PART NUMBER

RFD16N03L

RFD16N03LSM

PACKAGE

TO-251AA

TO-252AA

BRAND

16N03L

SOURCE

NOTE: When ordering, use the entire part number. Add the sufﬁx

9A, to obtain the TO-252AA variant in tape and reel, e.g.

RFD16N03LSM9A.

Formerly developmental type TA49030.

Absolute Maximum Ratings T = +25 C

RFD16N03L,

RFD16N03LSM

UNITS

Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

±10

RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Refer to Peak Current Curve

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Refer to UIS Curve

Power Dissipation

= +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

0.606

W/ C

Derate above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

, T

-55 to +175

260

STG

Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

File Number 4013.1

5-31

12 3 4 5 6 7

中文翻译

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与RFD16N03相关器件

型号	品牌	获取价格	描述	数据表
RFD16N03L	FAIRCHILD	获取价格	16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs
RFD16N03L	INTERSIL	获取价格	16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs
RFD16N03LSM	INTERSIL	获取价格	16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs
RFD16N03LSM	FAIRCHILD	获取价格	16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs
RFD16N03LSM9A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 16A I(D) \| TO-252AA
RFD16N05	FAIRCHILD	获取价格	16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
RFD16N05	INTERSIL	获取价格	16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
RFD16N05	ROCHESTER	获取价格	16A, 50V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
RFD16N05_03	FAIRCHILD	获取价格	16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
RFD16N05L	FAIRCHILD	获取价格	16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

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