Datasheet > RFD15N06LESM

RFD15N06LESM

更新时间： 2024-11-05 22:24:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关
页数	文件大小	规格书
8页	98K
描述
15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs

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RFD15N06LESM 数据手册

RFD15N06LE, RFD15N06LESM

Data Sheet

April 1999

File Number 4079.1

15A, 60V, 0.065 Ohm, ESD Rated, Logic

Level, N-Channel Power MOSFETs

Features

• 15A, 60V

These are N-Channel power MOSFETs manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI circuits, gives optimum

utilization of silicon, resulting in outstanding performance.

They were designed for use in applications such as

switching regulators, switching converters, motor drivers,

and relay drivers. These transistors can be operated directly

from integrated circuits.

• r

= 0.065Ω

DS(ON)

• 2kV ESD Protected

• Temperature Compensating PSPICE™ Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175 C Operating Temperature

Formerly developmental type TA49165.

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

PACKAGE

TO-251AA

TO-252AA

BRAND

F15N6L

Symbol

RFD15N06LE

RFD15N06LESM

NOTE: When ordering, use the entire part number. For ordering in tape

and reel, add the suffix 9A to the part number, i.e. RFD15N06LESM9A.

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE™ is a trademark of MicroSim Corporation.

6-149

12 3 4 5 6 7 8

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RFD15P06SM	INTERSIL	获取价格	15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs
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RFD16N02	INTERSIL	获取价格	16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET
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