Datasheet > Q67000-S221

Q67000-S221

更新时间： 2024-09-13 22:44:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
6页	333K
描述
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

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数据手册

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Q67000-S221 数据手册

SIPMOS Small-Signal Transistor

BSS 139

● V_DS

● I_D

250 V

0.04 A

● R_DS(on)100 Ω

● N channel

● Depletion mode

● High dynamic resistance

● Available grouped in V_GS(th)

Type

Ordering

Code

Tape and Reel

Information

Pin Configuration Marking Package

BSS 139 Q62702-S612 E6327: 3000 pcs/reel;

BSS 139 Q67000-S221 E7941: 3000 pcs/reel;

STs

SOT-23

_GS(th)selected in groups:

(see page 491)

Maximum Ratings

Parameter

Symbol

V_DS

Values

250

Unit

Drain-source voltage

Drain-gate voltage, R_GS= 20 kΩ

Gate-source voltage

V_DGR

V_GS

250

± 14

± 20

0.04

0.12

0.36

Gate-source peak voltage, aperiodic

Continuous drain current, T_A= 25 ˚C

V_gs

I_D

Pulsed drain current,

T_A= 25 ˚C

I_{D puls}

P_tot

Max. power dissipation,

˚C

Operating and storage temperature range

T_j, T_stg

– 55 … + 150

Thermal resistance, chip-ambient

(without heat sink)

R_thJA

≤ 350

K/W

–

chip-substrate – reverse side ¹⁾

R_thJSR

≤ 285

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

–

55/150/56

¹⁾For package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.

Semiconductor Group

10.94

12 3 4 5 6

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