Datasheet > PZT559

PZT559

更新时间： 2024-09-14 10:19:15

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	925K
描述
PNP Silicon Planar

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PZT559 数据手册

PZT559

PNP Silicon Planar

Elektronische Bauelemente

High Current Transistor

RoHS Compliant Product

SOT-223

Description

The PZT559 is designed for general

purpose switching and amplifier

applications.

Features

* Excellent Gain Characteristic Specified

Up To 3 Amps.

Millimeter

Min. Max.

13̓TYP.

Millimeter

REF.

* 4 Amps Continuous Current, Up To

10 Amps Peak Current

Min.

6.70

2.90

0.02

0̓

Max.

7.30

3.10

0.10

10̓

2.30 REF.

* Very Low Saturation Voltages

5 5 9

6.30

6.70

3.70

1.80

Date Code

6.30

3.30

1.40

0.60

0.25

0.80

0.35

MAXIMUM RATINGS* (T_amb=25^oC, unless otherwise specified)

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

-180

-140

-6

V^CEO

V^EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

-4

ICM

-10

Total Power Dissipation

Storage Temperature

-55~+150

Junction and

TJ,

Tstg

*The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min..

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

Typ.

Uni

Parameter

Collector-Base Breakdown Voltage

Symbol

BVCBO

BVCER

*BVCEO

BVEBO

Min

-180

-140

-6

Max

Test Conditions

IC=-100µA, IE=0

≦

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

IC=-1µA, RB 1K

IC=-10mA, IB=0

IE=-100µA, IC=0

ICBO

ICER

-50

VCB=-150V, IE=0

≦

0V,

-15

VEB=-

IEBO

C=0

6V,I

-10

-60

*VCE(sat)1

*VCE(sat)2

*VCE(sat)3

IC=-100m A,IB=-5mA

IC=-500A,IB=-50mA

IC=-1A,IB=-100mA

IC=-3A,IB=-300mA

IC=-3A,VCE=-5V

-120

Collector Saturation Voltage

-150

-370

*VCE(sat)4

*VBE(sat)

*VBE(on)

*hFE1

Base Saturation Voltage

Base-Emitter Voltage

-1.11

-0.95

100

VCE=-5V, IC=-10mA

*hFE2

200

140

300

VCE=-5V, IC=-1 A

DC Current Gain

*hFE3

VCE=- 5V, IC=-3A

VCE=- 5V, IC=-10A

VCE=- 10V, IC=-100mA

VCB=-20V, f=1MHz

*hFE4

110

, f=50MHz

Gain-Bandwidth Product

Output Capacitance

Cob

Ton

Toff

On-Time

Off-Time

VCC=-50V,IC=- ,IB1=IB2=- 00mA

1030

≦

*Measured under pulse condition. Pulse width 300 s, Duty Cycle 2%

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

中文翻译

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与PZT559相关器件

型号	品牌	获取价格	描述	数据表
PZT559A	SECOS	获取价格	Silicon Planar Medium Power Transistor
PZT65	ONSEMI	获取价格	HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT
PZT651	ONSEMI	获取价格	NPN Silicon Planar Epitaxial Transistor
PZT651	MOTOROLA	获取价格	2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA, PLASTIC, CASE 318E-04, 4 PIN
PZT651	UTC	获取价格	NPN
PZT651T1	ONSEMI	获取价格	HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT
PZT651T1/D	ETC	获取价格	NPN Silicon Planar Epitaxial Transistor
PZT651T1G	ONSEMI	获取价格	NPN Silicon Planar Epitaxial Transistor
PZT651T3	ONSEMI	获取价格	2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA, CASE 318E-04, 4 PIN
PZT651T3G	ONSEMI	获取价格	2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA, HALOGEN FREE AND ROHS COMPLIANT,

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