5秒后页面跳转
PZT651T1/D PDF预览

PZT651T1/D

更新时间: 2024-09-14 23:30:27
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 55K
描述
NPN Silicon Planar Epitaxial Transistor

PZT651T1/D 数据手册

 浏览型号PZT651T1/D的Datasheet PDF文件第2页浏览型号PZT651T1/D的Datasheet PDF文件第3页浏览型号PZT651T1/D的Datasheet PDF文件第4页浏览型号PZT651T1/D的Datasheet PDF文件第5页浏览型号PZT651T1/D的Datasheet PDF文件第6页浏览型号PZT651T1/D的Datasheet PDF文件第7页 
ON Semiconductort  
PZT651T1  
ON Semiconductor Preferred Device  
NPN Silicon Planar  
Epitaxial Transistor  
This NPN Silicon Epitaxial transistor is designed for use in  
industrial and consumer applications. The device is housed in the  
SOT–223 package which is designed for medium power surface  
mount applications.  
High Current: 2.0 Amp  
The SOT–223 package can be soldered using wave or reflow.  
SOT–223 PACKAGE  
HIGH CURRENT  
NPN SILICON  
TRANSISTOR  
SURFACE MOUNT  
SOT–223 package ensures level mounting, resulting in improved  
thermal conduction, and allows visual inspection of soldered joints.  
The formed leads absorb thermal stress during soldering, eliminating  
the possibility of damage to the die.  
4
1
2
3
Available in 12 mm Tape and Reel  
Use PZT651T1 to order the 7 inch/1000 unit reel  
Use PZT651T3 to order the 13 inch/4000 unit reel  
CASE 318E–04, STYLE 1  
TO–261AA  
PNP Complement is PZT751T1  
COLLECTOR 2,4  
BASE  
1
EMITTER 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Collector–Emitter Voltage  
Symbol  
Value  
60  
Unit  
V
CEO  
V
CBO  
V
EBO  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Base Voltage  
80  
Emitter–Base Voltage  
5.0  
2.0  
Collector Current  
I
C
(1)  
Total Power Dissipation @ T = 25°C  
P
0.8  
6.4  
Watts  
mW/°C  
A
D
Derate above 25°C  
Storage Temperature Range  
Junction Temperature  
DEVICE MARKING  
651  
T
stg  
–65 to 150  
150  
°C  
°C  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance from Junction–to–Ambient in Free Air  
R
156  
°C/W  
θ
JA  
L
Maximum Temperature for Soldering Purposes  
Time in Solder Bath  
T
260  
10  
°C  
Sec  
1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum recommended footprint.  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 2  
PZT651T1/D  

与PZT651T1/D相关器件

型号 品牌 获取价格 描述 数据表
PZT651T1G ONSEMI

获取价格

NPN Silicon Planar Epitaxial Transistor
PZT651T3 ONSEMI

获取价格

2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA, CASE 318E-04, 4 PIN
PZT651T3G ONSEMI

获取价格

2000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA, HALOGEN FREE AND ROHS COMPLIANT,
PZT669A SECOS

获取价格

Epitaxial Planar Transistor
PZT6718 SECOS

获取价格

Epitaxial Planar Transistor
PZT7052 TI

获取价格

0.5A, 100V, NPN, Si, POWER TRANSISTOR
PZT7052/S62Z TI

获取价格

0.5A, 100V, NPN, Si, POWER TRANSISTOR
PZT751 MOTOROLA

获取价格

2000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA, PLASTIC, CASE 318E-04, 4 PIN
PZT751 UTC

获取价格

PNP
PZT751T1 MOTOROLA

获取价格

SOT-223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT