Datasheet > PZT772

PZT772

更新时间： 2024-09-15 10:19:15

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	439K
描述
Epitaxial Planar Transistor

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PZT772 数据手册

PZT772

PNP Transistor

Elektronische Bauelemente

Epitaxial Planar Transistor

RoHS Compliant Product

SOT-223

Description

The PZT772 is designed for using

in output stage of 2W amplifier,

voltage regulator, DC-DC converter

and driver.

REF.

Min.

6.70

2.90

0.02

0̓

Max.

7.30

3.10

0.10

10̓

Min.

13̓TYP.

2.30 REF.

Max.

7 7 2

6.30

6.70

3.70

1.80

Date Code

6.30

3.30

1.40

0.60

0.25

0.80

0.35

MAXIMUM RATINGS* (T_amb=25^oC, unless otherwise specified)

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

-40

-30

-5

V^CEO

V^EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Total Power Dissipation

-3

1.5

Storage Temperature

-55~-150

Junction and

TJ,

Tstg

ELECTRICAL CHARACTERISTICS Tamb=25ć unlessotherwise specified

Parameter

Symbol

MIN

UNIT

Test conditions

Ic=-100uA

TYP

MAX

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

-40

-30

I_C= -10 mA

I_E= -10uA

-5

Collector cut-off current

Emitter cut-off current

-1

V_CB= -30 V

V_EB=-3V

I_EBO

h_FE

V_CE= -2V, I_C= -20mA

DC current gain

h_FE

100

160

-0.3

-1

V_CE=-2V, I_C= -1mA

500

-0.5

I_C=-2A, I_B= -0.2A

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

-2

V_CE=-20V,IC=-20mA,

f = 100MHz

MHz

Transition frequency

Collector output capacitance

Cob

V_CB=-10V, f=1MHz

CLASSIFICATION OF hFE

Rank

Range

160-320

250-500

100-200

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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