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PZTA06D84Z PDF预览

PZTA06D84Z

更新时间: 2024-11-06 14:44:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器光电二极管晶体管
页数 文件大小 规格书
17页 778K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE, SOT-223, 4 PIN

PZTA06D84Z 技术参数

生命周期:Obsolete零件包装代码:SOT-223
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

PZTA06D84Z 数据手册

 浏览型号PZTA06D84Z的Datasheet PDF文件第2页浏览型号PZTA06D84Z的Datasheet PDF文件第3页浏览型号PZTA06D84Z的Datasheet PDF文件第4页浏览型号PZTA06D84Z的Datasheet PDF文件第5页浏览型号PZTA06D84Z的Datasheet PDF文件第6页浏览型号PZTA06D84Z的Datasheet PDF文件第7页 
MPSA06  
MMBTA06  
PZTA06  
C
C
E
E
C
B
TO-92  
C
B
SOT-23  
Mark: 1G  
B
SOT-223  
E
NPN General Purpose Amplifier  
This device is designed for general purpose amplifier applications  
at collector currents to 300 mA. Sourced from Process 33.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
80  
80  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
4.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
500  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MPSA06  
*MMBTA06  
**PZTA06  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
1,000  
8.0  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
200  
357  
125  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
1997 Fairchild Semiconductor Corporation  

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