Datasheet > PZTA14

PZTA14

更新时间： 2024-09-16 10:19:15

品牌	Logo	应用领域
SECOS		晶体晶体管光电二极管放大器
页数	文件大小	规格书
2页	476K
描述
Epitaxial Planar Transistor

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中文翻译

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PZTA14 数据手册

PZTA14

NPN Transistor

Elektronische Bauelemente

Epitaxial Planar Transistor

RoHS Compliant Product

SOT-223

Description

The PZTA14 is darlington amplifier

transistor designed for applications

requiring extremely high current gain.

Millimeter

Min. Max.

13̓TYP.

REF.

Min.

Max.

7.30

3.10

0.10

10̓

6.70

2.90

0.02

0̓

A 1 4

2.30 REF.

Date Code

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Ta=25

MAXIMUM RATINGS

ABSOLUTE

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

V^CEO

V^EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

300

Total Power Dissipation

Storage Temperature

-55~+150

Junction and

TJ,

Tstg

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

Typ.

Uni

Parameter

Symbol

BVCBO

BVCEO

BVEBO

Min

Max

Test Conditions

IC= 100µA

IC= 1mA

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

IE= 10µA

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

ICBO

IEBO

VCB=30V

100

1.5

VEB=10V

Collector Saturation Voltage

Base Satruation Voltage

VCE(sat)

VBE(on)

hFE1

IC=100mA,IB=0.1mA

VCE= 5V, IC=100mA

VCE= 5V, IC=10mA

10K

20K

125

DC Current Gain

hFE2

VCE= 5V, IC=100mA

Gain-Bandwidth Product

VCE= 5V, IC= 10mA,f=100MHz

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

Page 1 of 2

01-Jun-2002 Rev. A

中文翻译

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