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PZTA27 PDF预览

PZTA27

更新时间: 2024-11-09 12:20:19
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
2页 657K
描述
Epitaxial Planar Transistor

PZTA27 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.6Base Number Matches:1

PZTA27 数据手册

 浏览型号PZTA27的Datasheet PDF文件第2页 
PZTA27  
NPN Transistor  
Elektronische Bauelemente  
Epitaxial Planar Transistor  
RoHS Compliant Product  
SOT-223  
Description  
The PZTA27 is designed for darlington  
amplifier high current gain collector  
current to 500mA.  
Millimeter  
Millimeter  
Min. Max.  
13̓TYP.  
REF.  
REF.  
Min.  
Max.  
7.30  
3.10  
0.10  
10̓  
A
C
D
E
I
6.70  
2.90  
0.02  
0̓  
B
J
2.30 REF.  
A 2 7  
1
2
3
4
5
6.30  
6.70  
6.70  
3.70  
3.70  
1.80  
Date Code  
6.30  
3.30  
3.30  
1.40  
0.60  
0.25  
0.80  
0.35  
B
C
E
H
o
Ta=25  
MAXIMUM RATINGS  
ABSOLUTE  
Symbol  
C
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
60  
60  
10  
V
V
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
mA  
500  
2
W
Total Power Dissipation  
PD  
O
C
Storage Temperature  
-55~+150  
Junction and  
TJ,  
Tstg  
o
ELECTRICAL CHARACTERISTICS Tamb=25  
unless otherwise specified  
C
Typ.  
Uni  
V
t
Parameter  
Symbol  
BVCBO  
BVCES  
BVEBO  
Min  
60  
60  
10  
-
Max  
Test Conditions  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
IC= 100µA,IE=0  
-
-
-
-
-
-
IC=  
100µA,VBE=0  
V
V
IE= 10µA,IC=0  
VCB=50V,IE=0  
VEB=10V,IC=0  
VCE=50V  
Collector-Base Cutoff Current  
Emitter-Base Cutoff Current  
Collector-Base Cutoff Current  
-
ICBO  
IEBO  
ICES  
nA  
100  
100  
-
-
-
nA  
nA  
-
0
50  
-
-
-
-
-
1.5  
Collector Saturation Voltage  
Base Satruation Voltage  
VCE(sat)  
VBE(sat)  
hFE1  
IC=100mA,IB=0.1mA  
IC=100mA,VCE=5V  
VCE= 5V, IC=10mA  
VCE= 5V, IC=100mA  
V
V
2
-
-
10K  
10K  
DC Current Gain  
-
hFE2  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
Page 1 of 2  
01-Jun-2002 Rev. A  

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